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Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
A silicon nitride sintered body according to an embodiment of the present invention comprises silicon nitride crystal particles and a grain boundary phase, and is characterized in that when a Raman spectrum analysis is performed in a 20 [mu] m * 20 [mu] m region in an arbitrary cross section of the silicon nitride sintered body, seven or more peaks are detected in the range of 400 cm-1 to 1200 cm-1, the strongest peak of the seven or more peaks is not in the range of 515 cm <-1 > or more and 525 cm <-1 > or less. It is preferable that at least three of the seven or more peaks are within the range of 530 cm <-1 > to 830 cm <-1 > (inclusive). It is preferable that at least one of the seven or more peaks is within the range of 440 cm <-1 > to 460 cm <-1 > (inclusive).
实施方式的氮化硅烧结体的特征在于，其具备氮化硅结晶粒子及晶界相，在上述氮化硅烧结体的任意的截面中对20μm×20μm的区域进行拉曼光谱分析的情况下，在400cm‑1以上且1200cm‑1以下的范围内检测到7个以上的峰，上述7个以上的峰的最强峰不在515cm‑1以上且525cm‑1以下的范围内。此外，上述7个以上的峰中的至少3个优选在530cm‑1以上且830cm‑1以下的范围内。上述7个以上的峰中的至少1个优选在440cm‑1以上且460cm‑1以下的范围内。
Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
A silicon nitride sintered body according to an embodiment of the present invention comprises silicon nitride crystal particles and a grain boundary phase, and is characterized in that when a Raman spectrum analysis is performed in a 20 [mu] m * 20 [mu] m region in an arbitrary cross section of the silicon nitride sintered body, seven or more peaks are detected in the range of 400 cm-1 to 1200 cm-1, the strongest peak of the seven or more peaks is not in the range of 515 cm <-1 > or more and 525 cm <-1 > or less. It is preferable that at least three of the seven or more peaks are within the range of 530 cm <-1 > to 830 cm <-1 > (inclusive). It is preferable that at least one of the seven or more peaks is within the range of 440 cm <-1 > to 460 cm <-1 > (inclusive).
实施方式的氮化硅烧结体的特征在于，其具备氮化硅结晶粒子及晶界相，在上述氮化硅烧结体的任意的截面中对20μm×20μm的区域进行拉曼光谱分析的情况下，在400cm‑1以上且1200cm‑1以下的范围内检测到7个以上的峰，上述7个以上的峰的最强峰不在515cm‑1以上且525cm‑1以下的范围内。此外，上述7个以上的峰中的至少3个优选在530cm‑1以上且830cm‑1以下的范围内。上述7个以上的峰中的至少1个优选在440cm‑1以上且460cm‑1以下的范围内。
Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride sintered body
氮化硅烧结体、耐磨性构件及氮化硅烧结体的制造方法
SANO SHOYA (author) / AOKI YOSHIYUKI (author) / FUNAKI KAI (author) / OKUBO KAZUYA (author)
2023-11-10
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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