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Tungsten carbide-silicon nitride composite material and spark plasma sintering method thereof
The invention relates to a tungsten carbide-silicon nitride composite material and a spark plasma sintering method thereof. Comprising the following steps: (1) respectively preparing silicon nitride-based powder, tungsten carbide-based powder and transition layer mixed powder; the silicon nitride-based mixed powder comprises the following components in percentage by mass: 92 to 96 weight percent of Si3N4, 1 to 3 weight percent of Y2O3, 1 to 3 weight percent of MgSiN and 1 to 3 weight percent of Al2O3; the tungsten carbide-based mixed powder specifically comprises the following components in percentage by mass: 92 to 96 weight percent of WC, 1 to 4 weight percent of Si3N4, 1 to 3 weight percent of Y2O3 and 1 to 3 weight percent of Al2O3; the transition layer part is composed of 5-10 sub-layers; (2) sequentially filling tungsten carbide-based mixed powder, transition layer mixed powder and silicon nitride-based mixed powder into a graphite mold; and (3) sintering in a discharge plasma sintering furnace. Silicon nitride, yttrium oxide and aluminum oxide are adopted as sintering aids to replace metal binding phase cobalt, so that the spark plasma sintering temperature of the tungsten carbide material is increased to 1650 DEG C, and gradient transition of the two materials is realized through the transition layer with gradient change; and the tungsten carbide-based hard alloy and the silicon nitride ceramic are connected in a one-time sintering mode through spark plasma sintering.
本发明为一种碳化钨‑氮化硅复合材料及其放电等离子烧结方法。包括如下步骤：(1)分别制备氮化硅基、碳化钨基和过渡层混合粉末；氮化硅基混合粉末的组分质量配比为：Si3N492～96wt％、Y2O31～3wt％、MgSiN21～3wt％、Al2O31～3wt％；碳化钨基混合粉末的组分质量配比具体为：WC92～96wt％、Si3N41～4wt％、Y2O31～3wt％、Al2O31～3wt％；过渡层部分由5～10个子层构成；(2)将粉末按照碳化钨基混合粉末‑过渡层混合粉末‑氮化硅基混合粉末依次填入石墨模具中；(3)放入放电等离子烧结炉中进行烧结。本发明采用氮化硅、氧化钇和氧化铝作为烧结助剂来代替金属粘结相钴，使该碳化钨材料的放电等离子烧结温度升高至1650℃，通过梯度变化的过渡层实现两种材料的梯度过渡，采用放电等离子烧结一次烧结连接碳化钨基硬质合金和氮化硅陶瓷。
Tungsten carbide-silicon nitride composite material and spark plasma sintering method thereof
The invention relates to a tungsten carbide-silicon nitride composite material and a spark plasma sintering method thereof. Comprising the following steps: (1) respectively preparing silicon nitride-based powder, tungsten carbide-based powder and transition layer mixed powder; the silicon nitride-based mixed powder comprises the following components in percentage by mass: 92 to 96 weight percent of Si3N4, 1 to 3 weight percent of Y2O3, 1 to 3 weight percent of MgSiN and 1 to 3 weight percent of Al2O3; the tungsten carbide-based mixed powder specifically comprises the following components in percentage by mass: 92 to 96 weight percent of WC, 1 to 4 weight percent of Si3N4, 1 to 3 weight percent of Y2O3 and 1 to 3 weight percent of Al2O3; the transition layer part is composed of 5-10 sub-layers; (2) sequentially filling tungsten carbide-based mixed powder, transition layer mixed powder and silicon nitride-based mixed powder into a graphite mold; and (3) sintering in a discharge plasma sintering furnace. Silicon nitride, yttrium oxide and aluminum oxide are adopted as sintering aids to replace metal binding phase cobalt, so that the spark plasma sintering temperature of the tungsten carbide material is increased to 1650 DEG C, and gradient transition of the two materials is realized through the transition layer with gradient change; and the tungsten carbide-based hard alloy and the silicon nitride ceramic are connected in a one-time sintering mode through spark plasma sintering.
本发明为一种碳化钨‑氮化硅复合材料及其放电等离子烧结方法。包括如下步骤：(1)分别制备氮化硅基、碳化钨基和过渡层混合粉末；氮化硅基混合粉末的组分质量配比为：Si3N492～96wt％、Y2O31～3wt％、MgSiN21～3wt％、Al2O31～3wt％；碳化钨基混合粉末的组分质量配比具体为：WC92～96wt％、Si3N41～4wt％、Y2O31～3wt％、Al2O31～3wt％；过渡层部分由5～10个子层构成；(2)将粉末按照碳化钨基混合粉末‑过渡层混合粉末‑氮化硅基混合粉末依次填入石墨模具中；(3)放入放电等离子烧结炉中进行烧结。本发明采用氮化硅、氧化钇和氧化铝作为烧结助剂来代替金属粘结相钴，使该碳化钨材料的放电等离子烧结温度升高至1650℃，通过梯度变化的过渡层实现两种材料的梯度过渡，采用放电等离子烧结一次烧结连接碳化钨基硬质合金和氮化硅陶瓷。
Tungsten carbide-silicon nitride composite material and spark plasma sintering method thereof
碳化钨-氮化硅复合材料及其放电等离子烧结方法
WANG ZHENHUA (author) / YIN CHAOHUI (author) / HUANG LEI (author)
2024-01-19
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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