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Method for connecting silicon carbide ceramic part and biscuit
The invention belongs to the technical field of reactive sintering SiC ceramics, and discloses a method for connecting a silicon carbide ceramic part and a biscuit. The method comprises the following steps: machining a workpiece to be repaired at a defective part of reactive sintering silicon carbide, repairing and processing a single-degree-of-freedom complementary part by using a SiC biscuit, coating a binder, connecting in a clearance fit manner, pressing, drying, polishing, contacting a sintered body in the connecting part with a sufficient Si source, sintering in a specific environment, and performing finish machining after treatment to obtain the SiC ceramic part. According to the method, the precision and the allowance are controlled in a biscuit complementary part clearance fit mode, the effects of improving purity and densification are achieved through homogeneous reaction connection according to the dynamic principle that capillary force adsorbs free Si in a SiC sintered body to enter and a Si source continuously supplements the sintered body, connection of the sintered body and the biscuit is achieved, and the method is suitable for large-scale production. The utilization rate of the high-purity SiC ceramic component for semiconductor equipment is increased, repeated preparation procedures are avoided, operation is easy, and the process is simple.
本发明属于反应烧结SiC陶瓷技术领域，公开了一种碳化硅陶瓷部件与素坯的连接方法。步骤为：将反应烧结碳化硅的缺陷部位机加出被补工件，利用SiC素坯补配加工出单自由度互补件，涂敷粘结剂，采用间隙配合的方式连接，然后施压干燥、打磨，将连接件中烧结体与充足的Si源接触，置于特定环境中烧结，处理后精加工得到SiC陶瓷部件。本发明通过素坯互补件间隙配合的方式控制精度和余量，利用毛细管力吸附SiC烧结体中游离Si进入、Si源不断补充烧结体的动力学原理，通过同质反应连接达到提高纯度和致密化的效果，使烧结体和素坯的连接成为现实，提高了半导体装备用高纯SiC陶瓷部件的利用率，避免了重复制备工序，操作容易，过程简单。
Method for connecting silicon carbide ceramic part and biscuit
The invention belongs to the technical field of reactive sintering SiC ceramics, and discloses a method for connecting a silicon carbide ceramic part and a biscuit. The method comprises the following steps: machining a workpiece to be repaired at a defective part of reactive sintering silicon carbide, repairing and processing a single-degree-of-freedom complementary part by using a SiC biscuit, coating a binder, connecting in a clearance fit manner, pressing, drying, polishing, contacting a sintered body in the connecting part with a sufficient Si source, sintering in a specific environment, and performing finish machining after treatment to obtain the SiC ceramic part. According to the method, the precision and the allowance are controlled in a biscuit complementary part clearance fit mode, the effects of improving purity and densification are achieved through homogeneous reaction connection according to the dynamic principle that capillary force adsorbs free Si in a SiC sintered body to enter and a Si source continuously supplements the sintered body, connection of the sintered body and the biscuit is achieved, and the method is suitable for large-scale production. The utilization rate of the high-purity SiC ceramic component for semiconductor equipment is increased, repeated preparation procedures are avoided, operation is easy, and the process is simple.
本发明属于反应烧结SiC陶瓷技术领域，公开了一种碳化硅陶瓷部件与素坯的连接方法。步骤为：将反应烧结碳化硅的缺陷部位机加出被补工件，利用SiC素坯补配加工出单自由度互补件，涂敷粘结剂，采用间隙配合的方式连接，然后施压干燥、打磨，将连接件中烧结体与充足的Si源接触，置于特定环境中烧结，处理后精加工得到SiC陶瓷部件。本发明通过素坯互补件间隙配合的方式控制精度和余量，利用毛细管力吸附SiC烧结体中游离Si进入、Si源不断补充烧结体的动力学原理，通过同质反应连接达到提高纯度和致密化的效果，使烧结体和素坯的连接成为现实，提高了半导体装备用高纯SiC陶瓷部件的利用率，避免了重复制备工序，操作容易，过程简单。
Method for connecting silicon carbide ceramic part and biscuit
一种碳化硅陶瓷部件与素坯的连接方法
FAN TIANYANG (author) / ZHANG XIN (author) / LIU XUN (author) / SONG YUNYUN (author)
2024-02-20
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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