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The invention discloses a method for preparing silicon carbide with ultralow boron content through reactive sintering, which comprises the following steps: 1) mixing materials, 2) extruding and drying, 3) preparing at least two coating solutions, 4) preparing a setter plate, 5) spraying the coating solutions, 6) sintering in vacuum, and 7) polishing and grinding a sintered body to obtain a product silicon carbide ceramic, and the boron content in a product silicon carbide ceramic sample is 1-80ppm; according to the preparation method, the silicon carbide material with the ultralow boron content can be prepared, the high-purity silicon carbide material is provided, the impurity content is extremely low, and the stability and reliability of the material can be improved; the prepared silicon carbide material shows excellent performance under extreme conditions of high temperature, high pressure, high strength and the like; and the production cost is reduced by preparing the ultra-low-boron-content silicon carbide material.
本发明公开了一种通过反应烧结制备超低硼含量碳化硅的方法，1)混料，2)挤出与干燥，3)配制至少两种涂层溶液，4)承烧板制备，5)涂层溶液喷涂，将6)真空烧结，7)将烧结体进行抛光打磨，得到产品碳化硅陶瓷，产品碳化硅陶瓷样品中的硼元素含量在1～80ppm；本发明的制备方法能够制备超低硼含量碳化硅材料，提供了高纯度的碳化硅材料，其中杂质含量极低，有助于提高材料的稳定性和可靠性；制备的碳化硅材料在高温、高压、高强度等极端条件下表现出卓越的性能；制备超低硼含量碳化硅材料降低生产成本。
The invention discloses a method for preparing silicon carbide with ultralow boron content through reactive sintering, which comprises the following steps: 1) mixing materials, 2) extruding and drying, 3) preparing at least two coating solutions, 4) preparing a setter plate, 5) spraying the coating solutions, 6) sintering in vacuum, and 7) polishing and grinding a sintered body to obtain a product silicon carbide ceramic, and the boron content in a product silicon carbide ceramic sample is 1-80ppm; according to the preparation method, the silicon carbide material with the ultralow boron content can be prepared, the high-purity silicon carbide material is provided, the impurity content is extremely low, and the stability and reliability of the material can be improved; the prepared silicon carbide material shows excellent performance under extreme conditions of high temperature, high pressure, high strength and the like; and the production cost is reduced by preparing the ultra-low-boron-content silicon carbide material.
本发明公开了一种通过反应烧结制备超低硼含量碳化硅的方法，1)混料，2)挤出与干燥，3)配制至少两种涂层溶液，4)承烧板制备，5)涂层溶液喷涂，将6)真空烧结，7)将烧结体进行抛光打磨，得到产品碳化硅陶瓷，产品碳化硅陶瓷样品中的硼元素含量在1～80ppm；本发明的制备方法能够制备超低硼含量碳化硅材料，提供了高纯度的碳化硅材料，其中杂质含量极低，有助于提高材料的稳定性和可靠性；制备的碳化硅材料在高温、高压、高强度等极端条件下表现出卓越的性能；制备超低硼含量碳化硅材料降低生产成本。
Method for preparing silicon carbide with ultralow boron content through reactive sintering
一种通过反应烧结制备超低硼含量碳化硅的方法
WU YIN (author)
2024-03-15
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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