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Rare earth doped IZO oxide target material and preparation method thereof
The invention discloses a rare earth doped IZO oxide target material and a preparation method thereof, and relates to the technical field of oxide target materials. The rare earth oxide-indium oxide-zinc oxide composite material comprises rare earth oxide, indium oxide and zinc oxide, wherein the atomic proportion of R, In and Zn of the target material meets the following relation: RxIn24-xZn36O72 (R is equal to Pr, Nd and Tb, and x is equal to 1, 2, 3, 4, 5 and 6). In2Zn3O6 with the best intrinsic conductivity in IZO (In2ZnkOk + 3) is selected as a target material main body material, the original conductivity of the main body material cannot be obviously reduced after trace rare earth elements are doped, and meanwhile, the use stability of the target material as a TFT (Thin Film Transistor) is improved. As a large amount of zinc oxide is used to replace indium oxide, the rare earth doped IZO oxide target material and the preparation method thereof provided by the invention have the characteristics of high performance and low raw material cost.
本发明公开了稀土掺杂IZO氧化物靶材及其制备方法，涉及氧化物靶材技术领域；其成分包括：稀土氧化物、氧化铟和氧化锌；其中，该靶材的R、In和Zn的原子比例满足以下关系：RxIn24‑xZn36O72(R＝Pr、Nd、Tb，x＝1、2、3、4、5、6)。本发明选择IZO(In2ZnkOk+3)中本征导电率最好的In2Zn3O6为靶材主体材料，通过掺杂微量稀土元素后不会明显降低主体材料原来导电率，同时提高了作为TFT使用的稳定性。由于使用了大量氧化锌代替了氧化铟的使用量，本发明提供的稀土掺杂IZO氧化物靶材及其制备方法具有高性能和原料成本低的特点。
Rare earth doped IZO oxide target material and preparation method thereof
The invention discloses a rare earth doped IZO oxide target material and a preparation method thereof, and relates to the technical field of oxide target materials. The rare earth oxide-indium oxide-zinc oxide composite material comprises rare earth oxide, indium oxide and zinc oxide, wherein the atomic proportion of R, In and Zn of the target material meets the following relation: RxIn24-xZn36O72 (R is equal to Pr, Nd and Tb, and x is equal to 1, 2, 3, 4, 5 and 6). In2Zn3O6 with the best intrinsic conductivity in IZO (In2ZnkOk + 3) is selected as a target material main body material, the original conductivity of the main body material cannot be obviously reduced after trace rare earth elements are doped, and meanwhile, the use stability of the target material as a TFT (Thin Film Transistor) is improved. As a large amount of zinc oxide is used to replace indium oxide, the rare earth doped IZO oxide target material and the preparation method thereof provided by the invention have the characteristics of high performance and low raw material cost.
本发明公开了稀土掺杂IZO氧化物靶材及其制备方法，涉及氧化物靶材技术领域；其成分包括：稀土氧化物、氧化铟和氧化锌；其中，该靶材的R、In和Zn的原子比例满足以下关系：RxIn24‑xZn36O72(R＝Pr、Nd、Tb，x＝1、2、3、4、5、6)。本发明选择IZO(In2ZnkOk+3)中本征导电率最好的In2Zn3O6为靶材主体材料，通过掺杂微量稀土元素后不会明显降低主体材料原来导电率，同时提高了作为TFT使用的稳定性。由于使用了大量氧化锌代替了氧化铟的使用量，本发明提供的稀土掺杂IZO氧化物靶材及其制备方法具有高性能和原料成本低的特点。
Rare earth doped IZO oxide target material and preparation method thereof
稀土掺杂IZO氧化物靶材及其制备方法
CHEN LIJIA (author) / ZHANG XUEFENG (author) / SUN BENSHUANG (author) / WANG ZHIJUN (author) / CHEN CHONGYANG (author) / HAN BINGXUE (author)
2024-04-26
Patent
Electronic Resource
Chinese
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