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Preparation method and application of nickel oxide-based target material
The invention discloses a preparation method and application of a nickel oxide-based target material. The preparation method comprises the following steps: S1, preparing a metal oxide powder material into slurry, and granulating to obtain spherical particles, wherein the metal oxide powder material comprises the following components in parts by weight: 70-99 parts of micron-scale metal oxide powder and 1-30 parts of nano-scale metal oxide powder; s2, carrying out compression molding on the spherical particles, and carrying out cold isostatic pressing to obtain a biscuit target material; and S3, sintering the blank target material in a segmented manner, and cooling to obtain the target material. The nickel oxide-based target material prepared by the preparation method of the nickel oxide-based target material provided by the invention is high in density, small in grain size and adjustable in film band gap, so that the nickel oxide-based target material is adaptive to semiconductor devices in different fields.
本发明公开了一种氧化镍基靶材的制备方法与应用，包括以下步骤：S1、将金属氧化物粉末材料制成浆料后造粒后得到球型颗粒，其中所述金属氧化物粉末材料包括重量份为70‑99份的微米级金属氧化物粉末和重量份为1‑30份的纳米级金属氧化物粉末；S2、将所述球型颗粒进行模压成型、冷等静压后得素坯靶材；S3、将所述毛坯靶材分段烧结后降温即得。本发明提出一种氧化镍基靶材的制备方法制备得到的氧化镍基靶材密度高、晶粒尺寸小、薄膜带隙可调节的氧化镍靶材来适配不同领域的半导体器件。
Preparation method and application of nickel oxide-based target material
The invention discloses a preparation method and application of a nickel oxide-based target material. The preparation method comprises the following steps: S1, preparing a metal oxide powder material into slurry, and granulating to obtain spherical particles, wherein the metal oxide powder material comprises the following components in parts by weight: 70-99 parts of micron-scale metal oxide powder and 1-30 parts of nano-scale metal oxide powder; s2, carrying out compression molding on the spherical particles, and carrying out cold isostatic pressing to obtain a biscuit target material; and S3, sintering the blank target material in a segmented manner, and cooling to obtain the target material. The nickel oxide-based target material prepared by the preparation method of the nickel oxide-based target material provided by the invention is high in density, small in grain size and adjustable in film band gap, so that the nickel oxide-based target material is adaptive to semiconductor devices in different fields.
本发明公开了一种氧化镍基靶材的制备方法与应用，包括以下步骤：S1、将金属氧化物粉末材料制成浆料后造粒后得到球型颗粒，其中所述金属氧化物粉末材料包括重量份为70‑99份的微米级金属氧化物粉末和重量份为1‑30份的纳米级金属氧化物粉末；S2、将所述球型颗粒进行模压成型、冷等静压后得素坯靶材；S3、将所述毛坯靶材分段烧结后降温即得。本发明提出一种氧化镍基靶材的制备方法制备得到的氧化镍基靶材密度高、晶粒尺寸小、薄膜带隙可调节的氧化镍靶材来适配不同领域的半导体器件。
Preparation method and application of nickel oxide-based target material
一种氧化镍基靶材的制备方法与应用
LUO ZEYU (author) / CHEN LU (author) / GE CHUNQIAO (author)
2024-05-14
Patent
Electronic Resource
Chinese
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