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Perovskite type low infrared emission material and preparation method thereof
The invention provides a perovskite type low infrared emission material and a preparation method thereof. The infrared emissivity of the perovskite type low infrared emission material at the temperature of 600 DEG C and the wave band of 3-5 microns is 0.3-0.5, and the infrared emissivity of the perovskite type low infrared emission material at the temperature of 600 DEG C and the wave band of 8-14 microns is 0.2-0.4. The perovskite type low infrared emission material provided by the invention realizes 3-5 [mu] m and 8-14 [mu] m dual-band low emissivity in a high-temperature environment, and is suitable for a low infrared emission scene in the high-temperature environment.
本发明提供一种钙钛矿型低红外发射材料及其制备方法，所述钙钛矿型低红外发射材料在600℃下，3‑5μm波段的红外发射率为0.3‑0.5，所述钙钛矿型低红外发射材料在600℃下，8‑14μm波段的红外发射率为0.2‑0.4。本发明所提供的钙钛矿型低红外发射材料实现在高温环境下3‑5μm和8‑14μm双波段低发射率，适合用于高温环境下低红外发射场景。
Perovskite type low infrared emission material and preparation method thereof
The invention provides a perovskite type low infrared emission material and a preparation method thereof. The infrared emissivity of the perovskite type low infrared emission material at the temperature of 600 DEG C and the wave band of 3-5 microns is 0.3-0.5, and the infrared emissivity of the perovskite type low infrared emission material at the temperature of 600 DEG C and the wave band of 8-14 microns is 0.2-0.4. The perovskite type low infrared emission material provided by the invention realizes 3-5 [mu] m and 8-14 [mu] m dual-band low emissivity in a high-temperature environment, and is suitable for a low infrared emission scene in the high-temperature environment.
本发明提供一种钙钛矿型低红外发射材料及其制备方法，所述钙钛矿型低红外发射材料在600℃下，3‑5μm波段的红外发射率为0.3‑0.5，所述钙钛矿型低红外发射材料在600℃下，8‑14μm波段的红外发射率为0.2‑0.4。本发明所提供的钙钛矿型低红外发射材料实现在高温环境下3‑5μm和8‑14μm双波段低发射率，适合用于高温环境下低红外发射场景。
Perovskite type low infrared emission material and preparation method thereof
一种钙钛矿型低红外发射材料及其制备方法
WANG YIGUANG (author) / REN KE (author) / GUO JINCHENG (author) / CHEN YANFEI (author)
2024-05-31
Patent
Electronic Resource
Chinese
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