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Rare earth doped AZO polycrystalline thin film material and preparation method thereof
The embodiment of the invention discloses a rare earth doped AZO polycrystalline thin film material and a preparation method thereof. The polycrystalline thin film material is obtained by co-doping zinc oxide with rare earth and aluminum oxide, and the content of the rare earth is 0.1-5 wt.%, the content of the aluminum oxide is 2 wt.%, and the content of the zinc oxide is 93-98 wt.%. The thickness of the polycrystalline thin film material is 50-500nm, the visible light transmittance is 85-95%, and the resistivity is 1 * 10 <-4 >-9 * 10 <-4 > omega.cm; the preparation method comprises the following steps: S1, mixing rare earth powder, aluminum oxide powder and zinc oxide powder to obtain mixed powder; s2, pressing and sintering the mixed powder to obtain a target material; and S3, by taking the obtained target material as a sputtering target material, depositing on a substrate to obtain the systematic doped AZO polycrystalline thin film material. The AZO polycrystalline thin film material is excellent in performance and good in stability, can be comparable with an ITO material, and meets the application requirements in the fields of photovoltaic cells, thin film displays and the like; the preparation method is simple, process parameters are easy to regulate and control, and the method is suitable for industrial production.
本发明实施例公开了稀土掺杂AZO多晶薄膜材料及其制备方法；多晶薄膜材料由稀土、氧化铝对氧化锌进行共掺杂得到，其中，稀土的含量为0.1～5wt.％，氧化铝的含量为2wt.％，氧化锌的含量为93～98wt.％；多晶薄膜材料的厚度为50～500nm，可见光透过率为85～95％，电阻率为1×10‑4～9×10‑4Ω·cm；制备方法包括步骤：S1、稀土粉体、氧化铝粉体与氧化锌粉体混合，得到混合粉体；S2、混合粉体压制、烧结得到靶材；S3、以得到的靶材为溅射靶材，在衬底上沉积得到系统掺杂AZO多晶薄膜材料。AZO多晶薄膜材料性能优异，且稳定性好，可以媲美ITO材料，满足光伏电池、薄膜显示器等领域的应用要求；且制备方法简单，工艺参数易于调控，适合工业化生产。
Rare earth doped AZO polycrystalline thin film material and preparation method thereof
The embodiment of the invention discloses a rare earth doped AZO polycrystalline thin film material and a preparation method thereof. The polycrystalline thin film material is obtained by co-doping zinc oxide with rare earth and aluminum oxide, and the content of the rare earth is 0.1-5 wt.%, the content of the aluminum oxide is 2 wt.%, and the content of the zinc oxide is 93-98 wt.%. The thickness of the polycrystalline thin film material is 50-500nm, the visible light transmittance is 85-95%, and the resistivity is 1 * 10 <-4 >-9 * 10 <-4 > omega.cm; the preparation method comprises the following steps: S1, mixing rare earth powder, aluminum oxide powder and zinc oxide powder to obtain mixed powder; s2, pressing and sintering the mixed powder to obtain a target material; and S3, by taking the obtained target material as a sputtering target material, depositing on a substrate to obtain the systematic doped AZO polycrystalline thin film material. The AZO polycrystalline thin film material is excellent in performance and good in stability, can be comparable with an ITO material, and meets the application requirements in the fields of photovoltaic cells, thin film displays and the like; the preparation method is simple, process parameters are easy to regulate and control, and the method is suitable for industrial production.
本发明实施例公开了稀土掺杂AZO多晶薄膜材料及其制备方法；多晶薄膜材料由稀土、氧化铝对氧化锌进行共掺杂得到，其中，稀土的含量为0.1～5wt.％，氧化铝的含量为2wt.％，氧化锌的含量为93～98wt.％；多晶薄膜材料的厚度为50～500nm，可见光透过率为85～95％，电阻率为1×10‑4～9×10‑4Ω·cm；制备方法包括步骤：S1、稀土粉体、氧化铝粉体与氧化锌粉体混合，得到混合粉体；S2、混合粉体压制、烧结得到靶材；S3、以得到的靶材为溅射靶材，在衬底上沉积得到系统掺杂AZO多晶薄膜材料。AZO多晶薄膜材料性能优异，且稳定性好，可以媲美ITO材料，满足光伏电池、薄膜显示器等领域的应用要求；且制备方法简单，工艺参数易于调控，适合工业化生产。
Rare earth doped AZO polycrystalline thin film material and preparation method thereof
稀土掺杂AZO多晶薄膜材料及其制备方法
LIU MIAO (author) / LI JINGHUI (author) / SUN BENSHUANG (author) / HE JILIN (author) / LIU YANG (author) / WANG CHENGDUO (author) / CHEN JIE (author) / WANG ZHIJUN (author) / HU BAIZHI (author) / ZENG XUEYUN (author)
2024-06-28
Patent
Electronic Resource
Chinese
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