A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering method and device
The invention discloses a sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering method and a sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering device. The method comprises the following steps: preparing silicon carbide powder into a ceramic green body through the procedures of granulation, tabletting, glue discharging and presintering, and sintering, and is characterized in that the sintering comprises the following steps: (1) putting the ceramic green body into a sealed vacuum box, arranging electrodes at two ends of the ceramic green body, and connecting the electrodes to an alternating current power supply; in the sealed vacuum box, an aluminum oxide plate is cushioned at the bottom of the ceramic green body, an aluminum oxide plate is also arranged above the ceramic green body, and the upper aluminum oxide plate and the lower aluminum oxide plate are parallel and are supported by aluminum oxide blocks arranged on the two sides of the ceramic green body; (2) the atmosphere in the sealed vacuum box is adjusted to be inert atmosphere smaller than 1 atm; and (3) turning on a power supply, increasing the voltage until the ceramic green body generates creeping discharge, changing the conductivity of the ceramic green body and generating a current channel, continuously increasing the voltage to enable the current density to reach a preset value, and turning off the power supply to obtain the silicon carbide ceramic.
本发明公开一种无烧结助剂的碳化硅陶瓷室温超快速场致烧结方法及装置。该方法包括将碳化硅粉末经造粒、压片、排胶、预烧工序制成陶瓷生坯后进行烧结，其特征在于，所述烧结包括以下步骤：(1)将陶瓷生坯置于密封真空箱中，并在陶瓷生坯的两端设置电极，连接至交流电源；在密封真空箱中，所述陶瓷生坯的底部垫有氧化铝板，其上方也同时设有氧化铝板，上下的氧化铝板之间平行且由设在陶瓷生坯两侧的氧化铝块作支撑；(2)将密封真空箱内的气氛调节为＜1atm的惰性气氛；(3)开启电源，升高电压至陶瓷生坯发生沿面放电，使得陶瓷生坯电导率发生改变并产生电流通道，持续升高电压使电流密度至预定值，然后关闭电源，得到碳化硅陶瓷。
Sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering method and device
The invention discloses a sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering method and a sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering device. The method comprises the following steps: preparing silicon carbide powder into a ceramic green body through the procedures of granulation, tabletting, glue discharging and presintering, and sintering, and is characterized in that the sintering comprises the following steps: (1) putting the ceramic green body into a sealed vacuum box, arranging electrodes at two ends of the ceramic green body, and connecting the electrodes to an alternating current power supply; in the sealed vacuum box, an aluminum oxide plate is cushioned at the bottom of the ceramic green body, an aluminum oxide plate is also arranged above the ceramic green body, and the upper aluminum oxide plate and the lower aluminum oxide plate are parallel and are supported by aluminum oxide blocks arranged on the two sides of the ceramic green body; (2) the atmosphere in the sealed vacuum box is adjusted to be inert atmosphere smaller than 1 atm; and (3) turning on a power supply, increasing the voltage until the ceramic green body generates creeping discharge, changing the conductivity of the ceramic green body and generating a current channel, continuously increasing the voltage to enable the current density to reach a preset value, and turning off the power supply to obtain the silicon carbide ceramic.
本发明公开一种无烧结助剂的碳化硅陶瓷室温超快速场致烧结方法及装置。该方法包括将碳化硅粉末经造粒、压片、排胶、预烧工序制成陶瓷生坯后进行烧结，其特征在于，所述烧结包括以下步骤：(1)将陶瓷生坯置于密封真空箱中，并在陶瓷生坯的两端设置电极，连接至交流电源；在密封真空箱中，所述陶瓷生坯的底部垫有氧化铝板，其上方也同时设有氧化铝板，上下的氧化铝板之间平行且由设在陶瓷生坯两侧的氧化铝块作支撑；(2)将密封真空箱内的气氛调节为＜1atm的惰性气氛；(3)开启电源，升高电压至陶瓷生坯发生沿面放电，使得陶瓷生坯电导率发生改变并产生电流通道，持续升高电压使电流密度至预定值，然后关闭电源，得到碳化硅陶瓷。
Sintering-aid-free silicon carbide ceramic room-temperature ultra-fast field sintering method and device
一种无烧结助剂的碳化硅陶瓷室温超快速场致烧结方法及装置
WANG JUN (author) / ZHANG FENGZHEN (author) / LI ZHI (author) / ZHAO XINHAO (author) / WANG JIAXI (author) / WANG XILIN (author)
2024-07-05
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Reaction sintering silicon carbide ceramic uniform-temperature plate
| European Patent Office | 2015
Low-temperature sintering method of high-performance silicon carbide ceramic material
| European Patent Office | 2023
Low-temperature sintering method of high-performance silicon carbide ceramic material
| European Patent Office | 2022