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Multi-element oxide doped indium zinc oxide target material as well as preparation method and application thereof
The invention discloses a multi-element oxide doped indium zinc oxide target material as well as a preparation method and application thereof. The doped indium zinc oxide target material comprises the following components in percentage by mass: 80.0-88.6% of indium oxide; the content of zinc oxide is 10.9%-15.8%, the content of strontium oxide is 0.2%-1.8%, the content of bismuth oxide is 0.2%-0.6%, the content of vanadium oxide is 0.4%-1.2%, and the sum of all the components is 100%. The strontium oxide powder, the bismuth oxide powder and the vanadium oxide powder are added, the target material is prepared through mixed ball milling, compression molding and sintering, the density of the target material is improved, the resistivity of the target material is reduced, the grain size of the sintered target material is uniform, the strength of the target material is improved, and the performance of the target material is effectively improved; the prepared multi-element oxide doped IZO target material is subjected to sputtering coating, and the electrical stability and the film mobility of a film are effectively improved.
本发明公开了一种多元氧化物掺杂氧化铟锌靶材及其制备方法和应用，本发明的掺杂氧化铟锌靶材包括如下质量百分比的组分：氧化铟的含量为80.0％～88.6％；氧化锌的含量为10.9％～15.8％，氧化锶的含量为0.2％～1.8％，氧化铋的含量为0.2％～0.6％，氧化钒的含量为0.4％～1.2％，其各组分之和为100％。本发明通过添加氧化锶、氧化铋和氧化钒粉末，经过混合球磨、压制成型、烧结制得靶材，提高靶材的致密度，降低靶材的电阻率，烧制靶材晶粒大小均匀、靶材强度提升，有效提高靶材性能；将制得的多元氧化物掺杂IZO靶材溅射镀膜，薄膜的电学稳定性能和薄膜迁移率都得到有效提高。
Multi-element oxide doped indium zinc oxide target material as well as preparation method and application thereof
The invention discloses a multi-element oxide doped indium zinc oxide target material as well as a preparation method and application thereof. The doped indium zinc oxide target material comprises the following components in percentage by mass: 80.0-88.6% of indium oxide; the content of zinc oxide is 10.9%-15.8%, the content of strontium oxide is 0.2%-1.8%, the content of bismuth oxide is 0.2%-0.6%, the content of vanadium oxide is 0.4%-1.2%, and the sum of all the components is 100%. The strontium oxide powder, the bismuth oxide powder and the vanadium oxide powder are added, the target material is prepared through mixed ball milling, compression molding and sintering, the density of the target material is improved, the resistivity of the target material is reduced, the grain size of the sintered target material is uniform, the strength of the target material is improved, and the performance of the target material is effectively improved; the prepared multi-element oxide doped IZO target material is subjected to sputtering coating, and the electrical stability and the film mobility of a film are effectively improved.
本发明公开了一种多元氧化物掺杂氧化铟锌靶材及其制备方法和应用，本发明的掺杂氧化铟锌靶材包括如下质量百分比的组分：氧化铟的含量为80.0％～88.6％；氧化锌的含量为10.9％～15.8％，氧化锶的含量为0.2％～1.8％，氧化铋的含量为0.2％～0.6％，氧化钒的含量为0.4％～1.2％，其各组分之和为100％。本发明通过添加氧化锶、氧化铋和氧化钒粉末，经过混合球磨、压制成型、烧结制得靶材，提高靶材的致密度，降低靶材的电阻率，烧制靶材晶粒大小均匀、靶材强度提升，有效提高靶材性能；将制得的多元氧化物掺杂IZO靶材溅射镀膜，薄膜的电学稳定性能和薄膜迁移率都得到有效提高。
Multi-element oxide doped indium zinc oxide target material as well as preparation method and application thereof
一种多元氧化物掺杂氧化铟锌靶材及其制备方法和应用
ZHONG WEIPING (author) / GE CHUNQIAO (author) / LI QIANG (author) / YOU CHUN-SEOK (author)
2024-07-16
Patent
Electronic Resource
Chinese
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