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Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
The invention discloses a binary relaxation antiferroelectric energy storage ceramic material and a preparation method and application thereof, and the chemical formula of the binary relaxation antiferroelectric energy storage ceramic material is (1-x) NaNbO3-xBiFeO3-1wt% MgO, wherein 0 lt; the invention also specifically discloses a preparation method of the binary relaxation antiferroelectric energy storage ceramic material and an application of the binary relaxation antiferroelectric energy storage ceramic material in preparation of a ceramic capacitor. According to the preparation method, the NaNbO3-BiFeO3 binary relaxation antiferroelectric energy storage ceramic material and the preparation process are optimized by adding 1wt% of MgO, the high-quality (1-x) NN-xBFO-1wt% of MgO energy storage ceramic material is finally obtained, and the energy storage ceramic material can effectively stabilize the stability of an antiferroelectric P phase of NaNbO3 at room temperature, so that the energy storage density and the conversion efficiency of the energy storage ceramic material are greatly improved.
本发明公开了一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用，其中二元弛豫反铁电储能陶瓷材料的化学式为(1‑x)NaNbO3‑xBiFeO3‑1wt%MgO，其中0
Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
The invention discloses a binary relaxation antiferroelectric energy storage ceramic material and a preparation method and application thereof, and the chemical formula of the binary relaxation antiferroelectric energy storage ceramic material is (1-x) NaNbO3-xBiFeO3-1wt% MgO, wherein 0 lt; the invention also specifically discloses a preparation method of the binary relaxation antiferroelectric energy storage ceramic material and an application of the binary relaxation antiferroelectric energy storage ceramic material in preparation of a ceramic capacitor. According to the preparation method, the NaNbO3-BiFeO3 binary relaxation antiferroelectric energy storage ceramic material and the preparation process are optimized by adding 1wt% of MgO, the high-quality (1-x) NN-xBFO-1wt% of MgO energy storage ceramic material is finally obtained, and the energy storage ceramic material can effectively stabilize the stability of an antiferroelectric P phase of NaNbO3 at room temperature, so that the energy storage density and the conversion efficiency of the energy storage ceramic material are greatly improved.
本发明公开了一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用，其中二元弛豫反铁电储能陶瓷材料的化学式为(1‑x)NaNbO3‑xBiFeO3‑1wt%MgO，其中0
Binary relaxation antiferroelectric energy storage ceramic material and preparation method and application thereof
一种二元弛豫反铁电储能陶瓷材料及其制备方法和应用
SONG GUILIN (author) / ZHU MIAOMIAO (author) / JIANG JUNRU (author) / PAN QIANXI (author) / JIA PEIPEI (author) / ZHANG XIAOMING (author) / ZHANG NA (author)
2024-07-23
Patent
Electronic Resource
Chinese
| European Patent Office | 2024
| European Patent Office | 2024
Antiferroelectric ceramic material and preparation method thereof
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| European Patent Office | 2024
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