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Preparation process of high-electron-mobility oxide IGZO sputtering target material, target material and application
The invention discloses a preparation process of a high-electron-mobility oxide IGZO sputtering target material, the target material and application. In2O3, Ga2O3 and ZnO powder are put into a planetary powder mixing device to be uniformly mixed, and a mixture is formed; wherein the purity of the In2O3 powder, the purity of the Ga2O3 powder and the purity of the ZnO powder are all larger than or equal to 3.5 N to 4.5 N; wherein the particle size D of the In2O3 powder, the Ga2O3 powder and the ZnO powder is 50 to 35 [mu] m; wherein the size distribution of the particle size is controlled to be D90-D10-20 [mu] m. S2, putting the mixture into a graphite mold with a layer for preventing the oxide from being reduced, and shaping; the use of a binder is avoided, so that the IGZO target material with higher purity can be prepared. In a traditional process, impurities are often introduced due to the use of a binder, and the purity of a target material is reduced. According to the preparation method, high-purity raw materials are selected, and mixing and sintering are carried out under the condition of no binder, so that high purity of the target material is ensured.
本发明公开了高电子迁移率氧化物IGZO溅射靶材的制备工艺、靶材及应用；将In2O3、Ga2O3和ZnO粉末置入行星混粉装置混合均匀，形成混合物；其中，所述In2O3、所述Ga2O3和所述ZnO粉末的纯度均≥3.5N～4.5N；其中，所述In2O3、所述Ga2O3和所述ZnO粉末的粒径为D50～35–50μm；其中，所述粒径的尺寸分布控制在D90‑D10～20μm。S2、将所述混合物置入具有防止氧化物被还原层的石墨模具中定型；由于避免了粘结剂的使用，本发明能够制备出纯度更高的IGZO靶材。在传统工艺中，粘结剂的使用往往会引入杂质，降低靶材的纯度。而本发明通过选择高纯度原料，并在无粘结剂的情况下进行混合和烧结，确保了靶材的高纯度。
Preparation process of high-electron-mobility oxide IGZO sputtering target material, target material and application
The invention discloses a preparation process of a high-electron-mobility oxide IGZO sputtering target material, the target material and application. In2O3, Ga2O3 and ZnO powder are put into a planetary powder mixing device to be uniformly mixed, and a mixture is formed; wherein the purity of the In2O3 powder, the purity of the Ga2O3 powder and the purity of the ZnO powder are all larger than or equal to 3.5 N to 4.5 N; wherein the particle size D of the In2O3 powder, the Ga2O3 powder and the ZnO powder is 50 to 35 [mu] m; wherein the size distribution of the particle size is controlled to be D90-D10-20 [mu] m. S2, putting the mixture into a graphite mold with a layer for preventing the oxide from being reduced, and shaping; the use of a binder is avoided, so that the IGZO target material with higher purity can be prepared. In a traditional process, impurities are often introduced due to the use of a binder, and the purity of a target material is reduced. According to the preparation method, high-purity raw materials are selected, and mixing and sintering are carried out under the condition of no binder, so that high purity of the target material is ensured.
本发明公开了高电子迁移率氧化物IGZO溅射靶材的制备工艺、靶材及应用；将In2O3、Ga2O3和ZnO粉末置入行星混粉装置混合均匀，形成混合物；其中，所述In2O3、所述Ga2O3和所述ZnO粉末的纯度均≥3.5N～4.5N；其中，所述In2O3、所述Ga2O3和所述ZnO粉末的粒径为D50～35–50μm；其中，所述粒径的尺寸分布控制在D90‑D10～20μm。S2、将所述混合物置入具有防止氧化物被还原层的石墨模具中定型；由于避免了粘结剂的使用，本发明能够制备出纯度更高的IGZO靶材。在传统工艺中，粘结剂的使用往往会引入杂质，降低靶材的纯度。而本发明通过选择高纯度原料，并在无粘结剂的情况下进行混合和烧结，确保了靶材的高纯度。
Preparation process of high-electron-mobility oxide IGZO sputtering target material, target material and application
高电子迁移率氧化物IGZO溅射靶材的制备工艺、靶材及应用
LI ZONGYU (author) / QIU LIAN (author) / LIANG FANG (author) / HAN ZHENGFEI (author) / LU BO (author) / FENG XUE (author)
2024-08-16
Patent
Electronic Resource
Chinese