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Preparation method of high-purity silicon nitride ceramic material
The invention discloses a preparation method of a high-purity silicon nitride ceramic material, which specifically comprises the following steps: mixing and grinding silicon nitride, a sintering aid and a dispersing agent, and drying, filling in a mold and sintering; the sintering method comprises the following steps: heating to 1800-2000 DEG C, keeping for 0.5-1.5 hours, cooling to 1600-1800 DEG C in nitrogen and methane atmosphere, and keeping for 1-2 hours. The silicon nitride is a mixed material of alpha-silicon nitride and beta-silicon nitride, and the beta-silicon nitride accounts for 1-10% of the mass of the alpha-silicon nitride. A certain proportion of beta-silicon nitride is added into alpha-silicon nitride, alpha-to-beta phase change can be promoted through a dissolution and precipitation mechanism in the sintering process, the evolution of a crystal structure is accelerated through the alpha-to-beta phase change, beta-silicon nitride particles are dispersed, the added beta-silicon nitride seed crystal develops more quickly in the sintering process, and the crystal growth rate is increased. Wide application prospects are realized.
本发明公开了一种高纯度氮化硅陶瓷材料的制备方法，具体包括以下步骤：将氮化硅和烧结助剂与分散剂混合研磨，并进行干燥装模烧结；所述烧结方法为：先升温至1800‑2000℃保持0.5‑1.5h后再在氮气和甲烷气氛中降温至1600‑1800℃保持1‑2h。所述氮化硅为α‑氮化硅和β‑氮化硅的混合物料，其中β‑氮化硅占α‑氮化硅质量的1‑10％。在α‑氮化硅加入一定比例的β‑氮化硅，在烧结过程中会通过溶解析出机制促进α→β相变，α→β相变不仅加速了晶体结构的演变，还使得β‑氮化硅颗粒较为分散，添加的β‑氮化硅晶种在烧结过程中更快地发育，具有广阔的应用前景。
Preparation method of high-purity silicon nitride ceramic material
The invention discloses a preparation method of a high-purity silicon nitride ceramic material, which specifically comprises the following steps: mixing and grinding silicon nitride, a sintering aid and a dispersing agent, and drying, filling in a mold and sintering; the sintering method comprises the following steps: heating to 1800-2000 DEG C, keeping for 0.5-1.5 hours, cooling to 1600-1800 DEG C in nitrogen and methane atmosphere, and keeping for 1-2 hours. The silicon nitride is a mixed material of alpha-silicon nitride and beta-silicon nitride, and the beta-silicon nitride accounts for 1-10% of the mass of the alpha-silicon nitride. A certain proportion of beta-silicon nitride is added into alpha-silicon nitride, alpha-to-beta phase change can be promoted through a dissolution and precipitation mechanism in the sintering process, the evolution of a crystal structure is accelerated through the alpha-to-beta phase change, beta-silicon nitride particles are dispersed, the added beta-silicon nitride seed crystal develops more quickly in the sintering process, and the crystal growth rate is increased. Wide application prospects are realized.
本发明公开了一种高纯度氮化硅陶瓷材料的制备方法，具体包括以下步骤：将氮化硅和烧结助剂与分散剂混合研磨，并进行干燥装模烧结；所述烧结方法为：先升温至1800‑2000℃保持0.5‑1.5h后再在氮气和甲烷气氛中降温至1600‑1800℃保持1‑2h。所述氮化硅为α‑氮化硅和β‑氮化硅的混合物料，其中β‑氮化硅占α‑氮化硅质量的1‑10％。在α‑氮化硅加入一定比例的β‑氮化硅，在烧结过程中会通过溶解析出机制促进α→β相变，α→β相变不仅加速了晶体结构的演变，还使得β‑氮化硅颗粒较为分散，添加的β‑氮化硅晶种在烧结过程中更快地发育，具有广阔的应用前景。
Preparation method of high-purity silicon nitride ceramic material
一种高纯度氮化硅陶瓷材料的制备方法
CHEN BO (author) / JIANG XUEXIN (author)
2024-08-16
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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