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Variable-porosity silicon nitride ceramic component and preparation method thereof
The invention relates to a variable-porosity silicon nitride ceramic component and a preparation method thereof. The method comprises the following steps: S1, gel casting: preparing silicon nitride ceramic biscuits with different porosities and corresponding sintering aid slurry; s2, bonding the biscuits: connecting the silicon nitride ceramic biscuits with different porosities, and smearing sintering aid slurry at the joints to form a gel thin layer, so as to obtain a variable-porosity silicon nitride ceramic component precursor; and S3, degumming and sintering: removing organic matters in the variable-porosity silicon nitride ceramic component precursor, and sintering to obtain the variable-porosity silicon nitride ceramic component. Compared with the prior art, the obtained silicon nitride ceramic component is free of defects, internal stress and cracks.
本发明涉及一种变孔隙率氮化硅陶瓷构件及其制备方法，该方法包括以下步骤：S1，凝胶注模成型：制备不同孔隙率的氮化硅陶瓷素坯以及对应的烧结助剂浆料；S2，素坯粘接：将不同孔隙率的氮化硅陶瓷素坯连接并于连接处涂抹烧结助剂浆料形成凝胶薄层，得到变孔隙率氮化硅陶瓷构件前驱体；S3，脱胶烧结：排除变孔隙率氮化硅陶瓷构件前驱体内的有机物后进行烧结得到变孔隙率氮化硅陶瓷构件。与现有技术相比，本发明得到氮化硅陶瓷构件无缺陷、无内应力、无裂纹。
Variable-porosity silicon nitride ceramic component and preparation method thereof
The invention relates to a variable-porosity silicon nitride ceramic component and a preparation method thereof. The method comprises the following steps: S1, gel casting: preparing silicon nitride ceramic biscuits with different porosities and corresponding sintering aid slurry; s2, bonding the biscuits: connecting the silicon nitride ceramic biscuits with different porosities, and smearing sintering aid slurry at the joints to form a gel thin layer, so as to obtain a variable-porosity silicon nitride ceramic component precursor; and S3, degumming and sintering: removing organic matters in the variable-porosity silicon nitride ceramic component precursor, and sintering to obtain the variable-porosity silicon nitride ceramic component. Compared with the prior art, the obtained silicon nitride ceramic component is free of defects, internal stress and cracks.
本发明涉及一种变孔隙率氮化硅陶瓷构件及其制备方法，该方法包括以下步骤：S1，凝胶注模成型：制备不同孔隙率的氮化硅陶瓷素坯以及对应的烧结助剂浆料；S2，素坯粘接：将不同孔隙率的氮化硅陶瓷素坯连接并于连接处涂抹烧结助剂浆料形成凝胶薄层，得到变孔隙率氮化硅陶瓷构件前驱体；S3，脱胶烧结：排除变孔隙率氮化硅陶瓷构件前驱体内的有机物后进行烧结得到变孔隙率氮化硅陶瓷构件。与现有技术相比，本发明得到氮化硅陶瓷构件无缺陷、无内应力、无裂纹。
Variable-porosity silicon nitride ceramic component and preparation method thereof
一种变孔隙率氮化硅陶瓷构件及其制备方法
TIAN YUNLONG (author) / QI HAI (author) / GUO FANGQUAN (author) / HAN WEIYUE (author) / LI PENGFEI (author) / QIAN HAOJIE (author)
2024-08-23
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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