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Preparation method of variable-density silicon nitride ceramic component
The invention relates to a preparation method of a variable-density silicon nitride ceramic component. The variable density is realized by regulating and controlling a silicon nitride ceramic formula. Wherein the formula of the high-density ceramic comprises 70-80% of silicon nitride powder, 3-6% of silicon powder, 1-5% of kyanite powder, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder; the formula of the medium-density ceramic comprises 80-88% of silicon nitride powder, 3-5% of silicon oxide powder, 3-6% of aluminum oxide powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder; the formula of the low-density ceramic comprises 70-80% of silicon nitride powder, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder, 3-5% of boron nitride powder and 3-15% of alumina hollow particles. According to the invention, the powder materials of different formulas are sequentially poured into the mold, pressed and molded, and sintered, so that the prepared variable-density silicon nitride ceramic component has excellent comprehensive performance, the density of a high-density material reaches 80-90%, the bending strength is greater than or equal to 200MPa, the density of a medium-density material reaches 70-80%, the bending strength is greater than or equal to 150MPa, and the density of the high-density material reaches 80-90%. The density of the low-density material is 50-60%, the bending strength is larger than or equal to 60 MPa, and the dielectric constant is 3.0-4.0.
本发明涉及一种变密度氮化硅陶瓷构件的制备方法，变密度是通过调控氮化硅陶瓷配方实现。其中，高致密度陶瓷的配方为：氮化硅粉70‑80％、硅粉3‑6％、蓝晶石粉1‑5％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％；中等致密陶瓷的配方为：氮化硅粉80‑88％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％；低致密度陶瓷的配方为：氮化硅粉70‑80％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％、氧化铝空心颗粒3‑15％。本发明将不同配方的粉料先后倒入模具，压制成型，并进行烧结，制备出的变密度氮化硅陶瓷构件的综合性能优异，高致密材料致密度达到80‑90％、弯曲强度≥200MPa，中等致密材料致密度为70‑80％、弯曲强度≥150MPa，低致密材料致密度为50‑60％、弯曲强度≥60MPa、介电常数3.0‑4.0。
Preparation method of variable-density silicon nitride ceramic component
The invention relates to a preparation method of a variable-density silicon nitride ceramic component. The variable density is realized by regulating and controlling a silicon nitride ceramic formula. Wherein the formula of the high-density ceramic comprises 70-80% of silicon nitride powder, 3-6% of silicon powder, 1-5% of kyanite powder, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder; the formula of the medium-density ceramic comprises 80-88% of silicon nitride powder, 3-5% of silicon oxide powder, 3-6% of aluminum oxide powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder; the formula of the low-density ceramic comprises 70-80% of silicon nitride powder, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder, 3-5% of boron nitride powder and 3-15% of alumina hollow particles. According to the invention, the powder materials of different formulas are sequentially poured into the mold, pressed and molded, and sintered, so that the prepared variable-density silicon nitride ceramic component has excellent comprehensive performance, the density of a high-density material reaches 80-90%, the bending strength is greater than or equal to 200MPa, the density of a medium-density material reaches 70-80%, the bending strength is greater than or equal to 150MPa, and the density of the high-density material reaches 80-90%. The density of the low-density material is 50-60%, the bending strength is larger than or equal to 60 MPa, and the dielectric constant is 3.0-4.0.
本发明涉及一种变密度氮化硅陶瓷构件的制备方法，变密度是通过调控氮化硅陶瓷配方实现。其中，高致密度陶瓷的配方为：氮化硅粉70‑80％、硅粉3‑6％、蓝晶石粉1‑5％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％；中等致密陶瓷的配方为：氮化硅粉80‑88％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％；低致密度陶瓷的配方为：氮化硅粉70‑80％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％、氧化铝空心颗粒3‑15％。本发明将不同配方的粉料先后倒入模具，压制成型，并进行烧结，制备出的变密度氮化硅陶瓷构件的综合性能优异，高致密材料致密度达到80‑90％、弯曲强度≥200MPa，中等致密材料致密度为70‑80％、弯曲强度≥150MPa，低致密材料致密度为50‑60％、弯曲强度≥60MPa、介电常数3.0‑4.0。
Preparation method of variable-density silicon nitride ceramic component
一种变密度氮化硅陶瓷构件的制备方法
SUN ZHIQIANG (author) / ZHANG LU (author) / DONG HENG (author) / HAN YAO (author) / LI SHUQIN (author) / ZHANG JIAN (author) / YU CHANGQING (author)
2024-03-05
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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