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High-precision ceramic material for semiconductor and preparation method of high-precision ceramic material
The invention discloses a high-precision ceramic material for semiconductors and a preparation method thereof, and relates to the technical field of ceramic materials for semiconductors, the high-precision ceramic material is prepared from the following raw materials by weight: 55-75 parts of a matrix component, 3-5 parts of a sintering aid, 8-12 parts of an auxiliary component, 10-20 parts of a reinforcing component, and 1-3 parts of a bonding component; the matrix component is Ba-Ti-Bi-rare earth element-Zr-A-M-O, and A is formed by mixing B and Te according to the mass ratio of 1: (0.1-0.3); m is at least one of In, Fe, Co, Mo and Ta; the auxiliary component is prepared by mixing nano niobium silicide, nano tantalum carbide and nano gallium nitride according to the mass ratio of 1: (0.8 to 1.2): (0.3 to 0.5). The material is high in strength, sufficient in fracture toughness and low in dielectric loss and apparent porosity.
本发明公开了一种半导体用高精密陶瓷材料及其制备方法，涉及半导体用陶瓷材料技术领域，包括如下按重量份计的各原料制成：基体组分55‑75份、烧结助剂3‑5份、副组分8‑12份、增强组分10‑20份、粘结组分1‑3份；所述基体组分为Ba‑Ti‑Bi‑稀土元素‑Zr‑A‑M‑O，其中，A为B、Te按质量比1:(0.1‑0.3)混合而成；M为In、Fe、Co、Mo、Ta中的至少一种；所述副组分为纳米硅化铌、纳米碳化钽、纳米氮化镓按质量比1:(0.8‑1.2):(0.3‑0.5)混合而成。该材料强度高、断裂韧性足，介电损耗和显气孔率低。
High-precision ceramic material for semiconductor and preparation method of high-precision ceramic material
The invention discloses a high-precision ceramic material for semiconductors and a preparation method thereof, and relates to the technical field of ceramic materials for semiconductors, the high-precision ceramic material is prepared from the following raw materials by weight: 55-75 parts of a matrix component, 3-5 parts of a sintering aid, 8-12 parts of an auxiliary component, 10-20 parts of a reinforcing component, and 1-3 parts of a bonding component; the matrix component is Ba-Ti-Bi-rare earth element-Zr-A-M-O, and A is formed by mixing B and Te according to the mass ratio of 1: (0.1-0.3); m is at least one of In, Fe, Co, Mo and Ta; the auxiliary component is prepared by mixing nano niobium silicide, nano tantalum carbide and nano gallium nitride according to the mass ratio of 1: (0.8 to 1.2): (0.3 to 0.5). The material is high in strength, sufficient in fracture toughness and low in dielectric loss and apparent porosity.
本发明公开了一种半导体用高精密陶瓷材料及其制备方法，涉及半导体用陶瓷材料技术领域，包括如下按重量份计的各原料制成：基体组分55‑75份、烧结助剂3‑5份、副组分8‑12份、增强组分10‑20份、粘结组分1‑3份；所述基体组分为Ba‑Ti‑Bi‑稀土元素‑Zr‑A‑M‑O，其中，A为B、Te按质量比1:(0.1‑0.3)混合而成；M为In、Fe、Co、Mo、Ta中的至少一种；所述副组分为纳米硅化铌、纳米碳化钽、纳米氮化镓按质量比1:(0.8‑1.2):(0.3‑0.5)混合而成。该材料强度高、断裂韧性足，介电损耗和显气孔率低。
High-precision ceramic material for semiconductor and preparation method of high-precision ceramic material
一种半导体用高精密陶瓷材料及其制备方法
LIN SHANGTAO (author) / ZHAO FANGBIAO (author)
2024-10-29
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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