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Sputtering target, method for producing sputtering target, crystalline oxide thin film, thin film transistor, and electronic device
A sputtering target (1) is provided with an oxide sintered body containing an In element, an Ga element, and an O element, the sintered body having a crystal structure represented by In2O3, the atomic composition ratio of the Ga element in the oxide sintered body satisfying the following formula (1): 8 < = Ga/(In + Ga) < = 20 (1), and the flexural strength of the oxide sintered body being 140 MPa or more.
一种溅射靶(1)，是具备包含I n元素、Ga元素及O元素的氧化物烧结体的溅射靶，所述烧结体包含以I n2O3表示的晶体结构，所述氧化物烧结体中的所述Ga元素的原子组成比满足下述式(1)：8≤Ga/(I n+Ga)≤20…(1)，所述氧化物烧结体的抗折强度为140MPa以上。
Sputtering target, method for producing sputtering target, crystalline oxide thin film, thin film transistor, and electronic device
A sputtering target (1) is provided with an oxide sintered body containing an In element, an Ga element, and an O element, the sintered body having a crystal structure represented by In2O3, the atomic composition ratio of the Ga element in the oxide sintered body satisfying the following formula (1): 8 < = Ga/(In + Ga) < = 20 (1), and the flexural strength of the oxide sintered body being 140 MPa or more.
一种溅射靶(1)，是具备包含I n元素、Ga元素及O元素的氧化物烧结体的溅射靶，所述烧结体包含以I n2O3表示的晶体结构，所述氧化物烧结体中的所述Ga元素的原子组成比满足下述式(1)：8≤Ga/(I n+Ga)≤20…(1)，所述氧化物烧结体的抗折强度为140MPa以上。
Sputtering target, method for producing sputtering target, crystalline oxide thin film, thin film transistor, and electronic device
溅射靶、溅射靶的制造方法、晶体氧化物薄膜、薄膜晶体管及电子设备
ITOSE MAMI (author) / KAIJO AKIRA (author)
2024-11-08
Patent
Electronic Resource
Chinese
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