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Preparation method of gallium and zirconium co-doped zinc oxide target material
The invention discloses a preparation method of a gallium and zirconium co-doped zinc oxide target material, and relates to the technical field of target materials, the preparation method comprises the following steps: S1, uniformly mixing zirconium oxide, gallium oxide, water and a dispersing agent, and grinding to obtain slurry I; s2, uniformly mixing zinc oxide, water and a dispersing agent, adding the slurry I, uniformly mixing, adding a binder and a plasticizer, uniformly mixing, and grinding to obtain slurry II; s3, performing spray drying and granulation on the slurry II, and sieving to obtain granular powder; s4, the granular powder is subjected to hydraulic pressure and cold isostatic pressing forming, and a plain blank is obtained; and S5, sintering the blank, and cooling to obtain the gallium-zirconium co-doped zinc oxide target material. The gallium and zirconium co-doped zinc oxide target material prepared by the preparation method disclosed by the invention has relatively high relative density and relatively low resistivity; after magnetron sputtering, the obtained film has good electrical properties.
本申请公开了一种镓和锆共掺杂氧化锌靶材的制备方法，涉及靶材技术领域，所述制备方法，包括如下步骤：S1：将氧化锆、氧化镓、水、分散剂混合均匀，研磨，得到浆料一；S2：将氧化锌、水、分散剂混合均匀后，加入浆料一，混合均匀，再加入粘结剂和增塑剂，混合均匀，研磨，得到浆料二；S3：对浆料二喷雾干燥造粒后，过筛，得到粒状粉料；S4：对粒状粉料液压、冷等静压成型，得到素胚；S5：对素胚进行烧结，冷却后，得到镓锆共掺杂氧化锌靶材。本申请制得的镓和锆共掺杂的氧化锌靶材具有较高的相对密度、较低的电阻率；磁控溅射后，获得的薄膜具有较好的电学性能。
Preparation method of gallium and zirconium co-doped zinc oxide target material
The invention discloses a preparation method of a gallium and zirconium co-doped zinc oxide target material, and relates to the technical field of target materials, the preparation method comprises the following steps: S1, uniformly mixing zirconium oxide, gallium oxide, water and a dispersing agent, and grinding to obtain slurry I; s2, uniformly mixing zinc oxide, water and a dispersing agent, adding the slurry I, uniformly mixing, adding a binder and a plasticizer, uniformly mixing, and grinding to obtain slurry II; s3, performing spray drying and granulation on the slurry II, and sieving to obtain granular powder; s4, the granular powder is subjected to hydraulic pressure and cold isostatic pressing forming, and a plain blank is obtained; and S5, sintering the blank, and cooling to obtain the gallium-zirconium co-doped zinc oxide target material. The gallium and zirconium co-doped zinc oxide target material prepared by the preparation method disclosed by the invention has relatively high relative density and relatively low resistivity; after magnetron sputtering, the obtained film has good electrical properties.
本申请公开了一种镓和锆共掺杂氧化锌靶材的制备方法，涉及靶材技术领域，所述制备方法，包括如下步骤：S1：将氧化锆、氧化镓、水、分散剂混合均匀，研磨，得到浆料一；S2：将氧化锌、水、分散剂混合均匀后，加入浆料一，混合均匀，再加入粘结剂和增塑剂，混合均匀，研磨，得到浆料二；S3：对浆料二喷雾干燥造粒后，过筛，得到粒状粉料；S4：对粒状粉料液压、冷等静压成型，得到素胚；S5：对素胚进行烧结，冷却后，得到镓锆共掺杂氧化锌靶材。本申请制得的镓和锆共掺杂的氧化锌靶材具有较高的相对密度、较低的电阻率；磁控溅射后，获得的薄膜具有较好的电学性能。
Preparation method of gallium and zirconium co-doped zinc oxide target material
一种镓和锆共掺杂氧化锌靶材的制备方法
YAO YUAN (author) / ZHANG LILAN (author) / ZHANG QIHUA (author) / HUANG SHICHENG (author) / LU YINGDONG (author) / ZHU YONGCHANG (author)
2025-01-03
Patent
Electronic Resource
Chinese
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