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The invention discloses a zinc-based oxide target material as well as a preparation method and application thereof. The zinc-based oxide target material comprises the following raw materials: indium oxide, gallium oxide, tin oxide and zinc oxide quantum dots. The indium oxide quantum dots, the gallium oxide quantum dots, the tin oxide quantum dots and the zinc oxide quantum dots serve as preparation raw materials of the target material, the sintering temperature can be effectively reduced, the density of the target material is improved, and the volatilization rate is reduced. A thin film prepared from the zinc-based oxide target material has higher stability and high mobility.
本发明公开了一种锌基氧化物靶材及其制备方法和应用；该锌基氧化物靶材包括原料：氧化铟、氧化镓、氧化锡和氧化锌量子点。本发明以氧化铟、氧化镓、氧化锡和氧化锌量子点作为靶材的制备原料，能够有效降低烧结温度、提高靶材密度和减少挥发率。采用本发明的锌基氧化物靶材制备的薄膜具有更高的稳定性和高迁移率。
The invention discloses a zinc-based oxide target material as well as a preparation method and application thereof. The zinc-based oxide target material comprises the following raw materials: indium oxide, gallium oxide, tin oxide and zinc oxide quantum dots. The indium oxide quantum dots, the gallium oxide quantum dots, the tin oxide quantum dots and the zinc oxide quantum dots serve as preparation raw materials of the target material, the sintering temperature can be effectively reduced, the density of the target material is improved, and the volatilization rate is reduced. A thin film prepared from the zinc-based oxide target material has higher stability and high mobility.
本发明公开了一种锌基氧化物靶材及其制备方法和应用；该锌基氧化物靶材包括原料：氧化铟、氧化镓、氧化锡和氧化锌量子点。本发明以氧化铟、氧化镓、氧化锡和氧化锌量子点作为靶材的制备原料，能够有效降低烧结温度、提高靶材密度和减少挥发率。采用本发明的锌基氧化物靶材制备的薄膜具有更高的稳定性和高迁移率。
Zinc-based oxide target material and preparation method and application thereof
一种锌基氧化物靶材及其制备方法和应用
2025-01-14
Patent
Electronic Resource
Chinese
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