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Aluminum zinc oxide target material and preparation method and application thereof
The invention belongs to the field of semiconductors, and discloses a preparation method of an aluminum zinc oxide target material, which comprises the following steps: calcining aluminum zinc oxide powder in a crucible, and sieving to obtain powder I; spraying the binder solution on the powder I, and drying to obtain powder II; mixing the powder II with aluminum zinc oxide powder, and adjusting moisture to obtain powder III; the prepared low-density AZO target material is small in grain size, uniform in component and low in resistivity, the purity is larger than or equal to 99.99%, the relative density ranges from 55% to 65%, the target material performance is stable, the AZO target material is not prone to cracking in the evaporation process, and a conductive film obtained after evaporation has the characteristics of high transmittance and high conductivity. In addition, the invention also discloses an aluminum zinc oxide target material and application thereof.
本发明属于半导体领域，公开了一种氧化铝锌靶材的制备方法，所述制备方法先将氧化铝锌粉末放入坩埚中煅烧，过筛，得到粉体一；再将粘结剂溶液喷洒在粉体一上，烘干，得到粉体二；而后将粉体二与氧化铝锌粉末混合，调整水分，得到粉体三；最后将粉体三造粒，模压成型，烧结，得到氧化铝锌靶材，本发明所制备的低密度AZO靶材其晶粒尺寸细小且成分均匀，具有较低的电阻率、纯度≥99.99％、相对密度在55％～65％、靶材性能稳定、蒸镀时不易开裂，蒸镀后导电薄膜拥有高透过率及高电导率的特性，此外本申请还公开了一种氧化铝锌靶材及其应用。
Aluminum zinc oxide target material and preparation method and application thereof
The invention belongs to the field of semiconductors, and discloses a preparation method of an aluminum zinc oxide target material, which comprises the following steps: calcining aluminum zinc oxide powder in a crucible, and sieving to obtain powder I; spraying the binder solution on the powder I, and drying to obtain powder II; mixing the powder II with aluminum zinc oxide powder, and adjusting moisture to obtain powder III; the prepared low-density AZO target material is small in grain size, uniform in component and low in resistivity, the purity is larger than or equal to 99.99%, the relative density ranges from 55% to 65%, the target material performance is stable, the AZO target material is not prone to cracking in the evaporation process, and a conductive film obtained after evaporation has the characteristics of high transmittance and high conductivity. In addition, the invention also discloses an aluminum zinc oxide target material and application thereof.
本发明属于半导体领域，公开了一种氧化铝锌靶材的制备方法，所述制备方法先将氧化铝锌粉末放入坩埚中煅烧，过筛，得到粉体一；再将粘结剂溶液喷洒在粉体一上，烘干，得到粉体二；而后将粉体二与氧化铝锌粉末混合，调整水分，得到粉体三；最后将粉体三造粒，模压成型，烧结，得到氧化铝锌靶材，本发明所制备的低密度AZO靶材其晶粒尺寸细小且成分均匀，具有较低的电阻率、纯度≥99.99％、相对密度在55％～65％、靶材性能稳定、蒸镀时不易开裂，蒸镀后导电薄膜拥有高透过率及高电导率的特性，此外本申请还公开了一种氧化铝锌靶材及其应用。
Aluminum zinc oxide target material and preparation method and application thereof
一种氧化铝锌靶材及其制备方法、应用
GU DESHENG (author) / ZHANG XINGYU (author) / LUO SISHI (author) / LI KAIJIE (author) / WANG QIFENG (author)
2024-11-19
Patent
Electronic Resource
Chinese
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