A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Verfahren zur Herstellung eines gesinterten Leistungshalbleitersubstrates
The power semiconductor substrate (10) comprises an isolated laminar base body (12). A sequence of layers, made up of thin coupler layers (20,22,24), sintered metal layers (30,32,34) and conductor layers (40,42,44), is arranged on a main surface (120,122). The base body is made of industrial ceramics which includes aluminum oxide, aluminum nitrite and silicon nitrite. An independent claim is also included for a method for fabricating a power semiconductor substrate.
Verfahren zur Herstellung eines gesinterten Leistungshalbleitersubstrates
The power semiconductor substrate (10) comprises an isolated laminar base body (12). A sequence of layers, made up of thin coupler layers (20,22,24), sintered metal layers (30,32,34) and conductor layers (40,42,44), is arranged on a main surface (120,122). The base body is made of industrial ceramics which includes aluminum oxide, aluminum nitrite and silicon nitrite. An independent claim is also included for a method for fabricating a power semiconductor substrate.
Verfahren zur Herstellung eines gesinterten Leistungshalbleitersubstrates
Method for producing a sintered high performance semiconductor substrate
Procédé de fabrication d'un substrat semi-conducteur de puissance fritté
GÖBL CHRISTIAN (author) / BRAML HEIKO DR (author) / HERMANN ULRICH (author)
2018-05-09
Patent
Electronic Resource
German
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