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Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
A thin film capacitor is characterized by forming a lower electrode (14), coating a composition onto the lower electrode (14) without applying an annealing process having a temperature of greater than 300°C, drying at a predetermined temperature within a range from ambient temperature to 500°C, and calcining at a predetermined temperature within a range of 500 to 800°C and higher than a drying temperature. The process from coating to calcining performs the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film (16) formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode (14) and the thickness of the dielectric thin film (16) formed after the initial calcining step (thickness of lower electrode/ thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.
Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
A thin film capacitor is characterized by forming a lower electrode (14), coating a composition onto the lower electrode (14) without applying an annealing process having a temperature of greater than 300°C, drying at a predetermined temperature within a range from ambient temperature to 500°C, and calcining at a predetermined temperature within a range of 500 to 800°C and higher than a drying temperature. The process from coating to calcining performs the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film (16) formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode (14) and the thickness of the dielectric thin film (16) formed after the initial calcining step (thickness of lower electrode/ thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.
Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
Verfahren zur Herstellung eines Dünnschichtkondensators und dadurch erhaltener Dünnschichtkondensator
Procédé de fabrication d'un condensateur à film mince et condensateur à film mince ainsi obtenu
SAKURAI HIDEAKI (author) / WATANABE TOSHIAKI (author) / SOYAMA NOBUYUKI (author) / GUEGAN GUILLAUME (author)
2021-04-21
Patent
Electronic Resource
English
DIELECTRIC THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND THIN FILM CAPACITOR
| European Patent Office | 2017