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ZnO vapor deposition material and process for producing the same
A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing a first additive consiting of Ce and a second additive consiting of Ga. The content of the first additive element is higher than the content of the second additive element. The content of the first additive element is in a range of 0.1 to 14.9% by mass, and the content of the second additive element is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
ZnO vapor deposition material and process for producing the same
A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing a first additive consiting of Ce and a second additive consiting of Ga. The content of the first additive element is higher than the content of the second additive element. The content of the first additive element is in a range of 0.1 to 14.9% by mass, and the content of the second additive element is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
ZnO vapor deposition material and process for producing the same
ZnO-Aufdampfungsmaterial und Verfahren zu dessen Herstellung
Matériau de dépôt en phase vapeur d'oxyde de zinc et procédé de production de celui-ci
MAYUZUMI YOSHITAKA (author)
2015-11-04
Patent
Electronic Resource
English