A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SILICON CARBIDE MEMBER FOR PLASMA PROCESSING APPARATUS
The present invention has an object to provide a low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus of the present invention can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 µm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a BC sintering aid, or with a sintering aid comprising AlOand YOwith total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.
SILICON CARBIDE MEMBER FOR PLASMA PROCESSING APPARATUS
The present invention has an object to provide a low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus of the present invention can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 µm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a BC sintering aid, or with a sintering aid comprising AlOand YOwith total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.
SILICON CARBIDE MEMBER FOR PLASMA PROCESSING APPARATUS
SILIZIUMCARBIDELEMENT FÜR PLASMAVERARBEITUNGSVORRICHTUNG
ÉLÉMENT EN CARBURE DE SILICIUM POUR APPAREIL DE TRAITEMENT AU PLASMA
SUZUKI TOMOHISA (author) / MIYAHARA MICHITO (author) / SASAKI MASARU (author) / GOTO TUTSUYA (author)
2024-07-24
Patent
Electronic Resource
English
SILICON CARBIDE MEMBER FOR PLASMA PROCESSING APPARATUS, AND PRODUCTION METHOD THEREFOR
| European Patent Office | 2018
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT APPARATUS, AND METHOD OF MANUFACTURING SAME
| European Patent Office | 2018