A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SILICON NITRIDE SINTERED SUBSTRATE
The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 µm is not more than 7.0 × 10-5 mL/cm2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 µm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [1/mm] .
SILICON NITRIDE SINTERED SUBSTRATE
The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 µm is not more than 7.0 × 10-5 mL/cm2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 µm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [1/mm] .
SILICON NITRIDE SINTERED SUBSTRATE
GESINTERTES SILICIUMNITRIDSUBSTRAT
SUBSTRAT FRITTÉ EN NITRURE DE SILICIUM
MITSUMURA NORIHIRA (author) / KUSANO DAI (author) / KAWAI HIDEAKI (author)
2023-05-03
Patent
Electronic Resource
English
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