A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
The present invention relates to obtaining high-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0<111> single crystal with oxidation-induced stacking faults (OSF) of less than 10 defects/cm2.
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
The present invention relates to obtaining high-quality, inexpensive seed substrates with few crystal defects for epitaxial growth of epitaxial substrates and solid substrates of group III nitrides such as AlN, AlxGa1-xN (0<111> single crystal with oxidation-induced stacking faults (OSF) of less than 10 defects/cm2.
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
SAATSUBSTRAT FÜR EPITAKTISCHES WACHSTUM UND VERFAHREN ZUR HERSTELLUNG DAVON SOWIE HALBLEITERSUBSTRAT UND VERFAHREN ZUR HERSTELLUNG DAVON
SUBSTRAT GERME POUR CROISSANCE ÉPITAXIALE ET SON PROCÉDÉ DE PRODUCTION, ET SUBSTRAT SEMI-CONDUCTEUR ET SON PROCÉDÉ DE PRODUCTION
KUBOTA YOSHIHIRO (author) / KONISHI SHIGERU (author) / MOGI HIROSHI (author) / HIGUCHI KOICHI (author)
2024-09-04
Patent
Electronic Resource
English
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