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A platform for research: civil engineering, architecture and urbanism
FERROELECTRIC CERAMIC AND MANUFACTURING METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a ferroelectric ceramic which enables the enhancement in piezoelectric property by increasing the quantity of crystalline oriented a c-axial direction in a PZT film.SOLUTION: A ferroelectric ceramic according to an embodiment of the present invention comprises: a Si substrate 11; a multilayer film 12 formed on the Si substrate 11; a Pt film 13 formed on the multilayer film; a SrTiOfilm 14 formed on the Pt film; and a PZT film 15 formed on the SrTiOfilm. The multilayer film includes: a film formed by repeating the steps of forming a first ZrOfilm and a YOfilm in turn, provided that the number of the repetition is N; and a second ZrOfilm formed on the film formed by the N times repetition. The number N is an integer of one or larger. It is preferred that the ratio Y/(Zr+Y) of the multilayer film is 30% or less in percentage.
【課題】ＰＺＴ膜中のｃ軸方向に配向した結晶の量を増加させることで圧電特性を向上させることを課題とする。【解決手段】本発明の一態様は、Ｓｉ基板１１上に形成された積層膜１２と、前記積層膜上に形成されたＰｔ膜１３と、前記Ｐｔ膜上に形成されたＳｒＴｉＯ３膜１４と、前記ＳｒＴｉＯ３膜上に形成されたＰＺＴ膜１５と、を具備し、前記積層膜は、第１のＺｒＯ２膜とＹ２Ｏ３膜が順次Ｎ回繰り返して形成され、前記Ｎ回繰り返して形成された膜上に第２のＺｒＯ２膜が形成されたものであり、前記Ｎは１以上の整数である強誘電体セラミックスである。前記積層膜のＹ／（Ｚｒ＋Ｙ）の比率は３０％以下であるとよい。【選択図】図１
FERROELECTRIC CERAMIC AND MANUFACTURING METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a ferroelectric ceramic which enables the enhancement in piezoelectric property by increasing the quantity of crystalline oriented a c-axial direction in a PZT film.SOLUTION: A ferroelectric ceramic according to an embodiment of the present invention comprises: a Si substrate 11; a multilayer film 12 formed on the Si substrate 11; a Pt film 13 formed on the multilayer film; a SrTiOfilm 14 formed on the Pt film; and a PZT film 15 formed on the SrTiOfilm. The multilayer film includes: a film formed by repeating the steps of forming a first ZrOfilm and a YOfilm in turn, provided that the number of the repetition is N; and a second ZrOfilm formed on the film formed by the N times repetition. The number N is an integer of one or larger. It is preferred that the ratio Y/(Zr+Y) of the multilayer film is 30% or less in percentage.
【課題】ＰＺＴ膜中のｃ軸方向に配向した結晶の量を増加させることで圧電特性を向上させることを課題とする。【解決手段】本発明の一態様は、Ｓｉ基板１１上に形成された積層膜１２と、前記積層膜上に形成されたＰｔ膜１３と、前記Ｐｔ膜上に形成されたＳｒＴｉＯ３膜１４と、前記ＳｒＴｉＯ３膜上に形成されたＰＺＴ膜１５と、を具備し、前記積層膜は、第１のＺｒＯ２膜とＹ２Ｏ３膜が順次Ｎ回繰り返して形成され、前記Ｎ回繰り返して形成された膜上に第２のＺｒＯ２膜が形成されたものであり、前記Ｎは１以上の整数である強誘電体セラミックスである。前記積層膜のＹ／（Ｚｒ＋Ｙ）の比率は３０％以下であるとよい。【選択図】図１
FERROELECTRIC CERAMIC AND MANUFACTURING METHOD THEREOF
強誘電体セラミックス及びその製造方法
KIJIMA TAKESHI (author) / HONDA YUJI (author) / TANI YUKINORI (author)
2015-05-28
Patent
Electronic Resource
Japanese
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