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A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET, CONDUCTIVE OXIDE THIN FILM HAVING HIGH REFRACTIVE INDEX AND METHOD FOR PRODUCING OXIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a sintered body sputtering target that has a low bulk resistance, can be subjected to DC sputtering and can form a transparent and high refractive index thin film and to provide a high refractive index film formed by using the sintered body sputtering target.SOLUTION: A sintered body is composed of indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn) and oxygen (O), contains 2-65 mol% of In in terms of InOand 2-65 mol% of Ti or Cr in terms of TiOor CrO, respectively, and satisfies 0.5≤A/B≤5 and 0<10 when an atomic ratio of In is A (at%), an atomic ratio of Ti or Cr is B (at%) and an atomic ratio of Zn or Sn is C (at%). A sintered body sputtering target is produced by subjecting a raw material powder to pressure sintering at 900-1,500°C under an inert gas or vacuum atmosphere or press-forming a raw material powder and then performing pressureless sintering at 1,000-1,500°C.
【課題】バルク抵抗が低く、ＤＣスパッタリングが可能で、透明で高屈折率の薄膜を形成できる焼結体スパッタリングターゲット及びそれを用いて作製した高屈折率膜の提供。【解決手段】インジウム（Ｉｎ）、及び、チタン（Ｔｉ）又はクロム（Ｃｒ）、及び、亜鉛（Ｚｎ）又はスズ（Ｓｎ）、及び、酸素（Ｏ）からなり、ＩｎをＩｎ２Ｏ３換算で２〜６５ｍｏｌ％含有し、Ｔｉ又はＣｒを各々ＴｉＯ２換算又はＣｒ２Ｏ３換算で２〜６５ｍｏｌ％含有し、Ｉｎの原子比をＡ（ａｔ％）、Ｔｉ又はＣｒの原子比をＢ（ａｔ％）、Ｚｎ又はＳｎの原子比をＣ（ａｔ％）としたとき、０．５≰Ａ／Ｂ≰５であり、０＜Ｃ／（Ａ＋Ｂ）＜１０である焼結体。原料粉末を不活性ガス又は真空雰囲気の下、９００〜１５００℃で加圧焼結するか又は原料粉末をプレス成形した後、１０００〜１５００℃で常圧焼結して製造する焼結体スパッタリングターゲット。【選択図】なし
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET, CONDUCTIVE OXIDE THIN FILM HAVING HIGH REFRACTIVE INDEX AND METHOD FOR PRODUCING OXIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a sintered body sputtering target that has a low bulk resistance, can be subjected to DC sputtering and can form a transparent and high refractive index thin film and to provide a high refractive index film formed by using the sintered body sputtering target.SOLUTION: A sintered body is composed of indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn) and oxygen (O), contains 2-65 mol% of In in terms of InOand 2-65 mol% of Ti or Cr in terms of TiOor CrO, respectively, and satisfies 0.5≤A/B≤5 and 0<10 when an atomic ratio of In is A (at%), an atomic ratio of Ti or Cr is B (at%) and an atomic ratio of Zn or Sn is C (at%). A sintered body sputtering target is produced by subjecting a raw material powder to pressure sintering at 900-1,500°C under an inert gas or vacuum atmosphere or press-forming a raw material powder and then performing pressureless sintering at 1,000-1,500°C.
【課題】バルク抵抗が低く、ＤＣスパッタリングが可能で、透明で高屈折率の薄膜を形成できる焼結体スパッタリングターゲット及びそれを用いて作製した高屈折率膜の提供。【解決手段】インジウム（Ｉｎ）、及び、チタン（Ｔｉ）又はクロム（Ｃｒ）、及び、亜鉛（Ｚｎ）又はスズ（Ｓｎ）、及び、酸素（Ｏ）からなり、ＩｎをＩｎ２Ｏ３換算で２〜６５ｍｏｌ％含有し、Ｔｉ又はＣｒを各々ＴｉＯ２換算又はＣｒ２Ｏ３換算で２〜６５ｍｏｌ％含有し、Ｉｎの原子比をＡ（ａｔ％）、Ｔｉ又はＣｒの原子比をＢ（ａｔ％）、Ｚｎ又はＳｎの原子比をＣ（ａｔ％）としたとき、０．５≰Ａ／Ｂ≰５であり、０＜Ｃ／（Ａ＋Ｂ）＜１０である焼結体。原料粉末を不活性ガス又は真空雰囲気の下、９００〜１５００℃で加圧焼結するか又は原料粉末をプレス成形した後、１０００〜１５００℃で常圧焼結して製造する焼結体スパッタリングターゲット。【選択図】なし
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET, CONDUCTIVE OXIDE THIN FILM HAVING HIGH REFRACTIVE INDEX AND METHOD FOR PRODUCING OXIDE SINTERED BODY
酸化物焼結体、酸化物スパッタリングターゲット及び高屈折率の導電性酸化物薄膜並びに酸化物焼結体の製造方法
NARA ATSUSHI (author)
2015-06-11
Patent
Electronic Resource
Japanese
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