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METHOD FOR MANUFACTURING SUSCEPTOR FOR HOLDING WAFER, AND SUSCEPTOR FOR HOLDING WAFER
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a susceptor for holding a wafer, which is capable of keeping silicon carbide crystal exposed from a surface even under a use environment such that the silicon carbide is gradually etched, and capable of maintaining a slip-suppressing function for a long term; and such a susceptor for holding a wafer.SOLUTION: In a method for manufacturing a susceptor for holding a wafer, which is composed of a silicon carbide sintered compact produced by sintering a compact of silicon carbide powder, mixed silicon carbide powder 16 includes: silicon carbide fine powder 12 having an average particle diameter of 0.05-5 μm; and silicon carbide coarse powder 14 having an average particle diameter of 10-50 μm.
【課題】炭化珪素が徐々にエッチングされるような使用環境下でも表面に炭化珪素結晶が露出している状態を保持することができ、スリップ抑制機能を長期間維持できるようにしたウェーハ載置用サセプタの製造方法及びウェーハ載置用サセプタを提供する。【解決手段】炭化珪素粉末を焼結した炭化珪素焼結体からなるウェーハ載置用サセプタの製造方法であり、混合炭化珪素粉末１６が、平均粒径０．０５〜５μｍの炭化珪素微粉末１２及び平均粒径１０〜５０μｍの炭化珪素粗粉末１４を含む。【選択図】図１
METHOD FOR MANUFACTURING SUSCEPTOR FOR HOLDING WAFER, AND SUSCEPTOR FOR HOLDING WAFER
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a susceptor for holding a wafer, which is capable of keeping silicon carbide crystal exposed from a surface even under a use environment such that the silicon carbide is gradually etched, and capable of maintaining a slip-suppressing function for a long term; and such a susceptor for holding a wafer.SOLUTION: In a method for manufacturing a susceptor for holding a wafer, which is composed of a silicon carbide sintered compact produced by sintering a compact of silicon carbide powder, mixed silicon carbide powder 16 includes: silicon carbide fine powder 12 having an average particle diameter of 0.05-5 μm; and silicon carbide coarse powder 14 having an average particle diameter of 10-50 μm.
【課題】炭化珪素が徐々にエッチングされるような使用環境下でも表面に炭化珪素結晶が露出している状態を保持することができ、スリップ抑制機能を長期間維持できるようにしたウェーハ載置用サセプタの製造方法及びウェーハ載置用サセプタを提供する。【解決手段】炭化珪素粉末を焼結した炭化珪素焼結体からなるウェーハ載置用サセプタの製造方法であり、混合炭化珪素粉末１６が、平均粒径０．０５〜５μｍの炭化珪素微粉末１２及び平均粒径１０〜５０μｍの炭化珪素粗粉末１４を含む。【選択図】図１
METHOD FOR MANUFACTURING SUSCEPTOR FOR HOLDING WAFER, AND SUSCEPTOR FOR HOLDING WAFER
ウェーハ載置用サセプタの製造方法及びウェーハ載置用サセプタ
KOBAYASHI TAKESHI (author)
2015-10-08
Patent
Electronic Resource
Japanese
| European Patent Office | 2021