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LOW REFLECTION MEMBER
PROBLEM TO BE SOLVED: To provide a low reflection member capable of improving the exposure accuracy by suppressing the reflection of light.SOLUTION: The low reflection member of the present invention is made of ceramic having a lightness index of 45 or less. Assuming that the arithmetic average roughness of the surface of the ceramic is denoted with Ra and the average interval of a local crest is denoted with S, the value of Ra/S is 0.024 or more. The low reflection member of the present invention satisfying such a configuration can improve the exposure accuracy because the maximum value of the reflectance in a wavelength region of 360 to 440 nm is less than 6% and the reflectance is low.SELECTED DRAWING: None
【課題】 光の反射を抑制して露光精度を向上させることができる低反射部材を提供する。【解決手段】 本発明の低反射部材は、明度指数が45以下のセラミックスからなり、該セラミックスにおける表面の算術平均粗さをRa、局部山頂の平均間隔をSとしたとき、Ra/Sの値が0.024以上である。このような構成を満たす本発明の低反射部材は、360〜440nmの波長領域における反射率の最大値が6%未満であり反射率が低いため、露光精度を向上させることができる。【選択図】 なし
LOW REFLECTION MEMBER
PROBLEM TO BE SOLVED: To provide a low reflection member capable of improving the exposure accuracy by suppressing the reflection of light.SOLUTION: The low reflection member of the present invention is made of ceramic having a lightness index of 45 or less. Assuming that the arithmetic average roughness of the surface of the ceramic is denoted with Ra and the average interval of a local crest is denoted with S, the value of Ra/S is 0.024 or more. The low reflection member of the present invention satisfying such a configuration can improve the exposure accuracy because the maximum value of the reflectance in a wavelength region of 360 to 440 nm is less than 6% and the reflectance is low.SELECTED DRAWING: None
【課題】 光の反射を抑制して露光精度を向上させることができる低反射部材を提供する。【解決手段】 本発明の低反射部材は、明度指数が45以下のセラミックスからなり、該セラミックスにおける表面の算術平均粗さをRa、局部山頂の平均間隔をSとしたとき、Ra/Sの値が0.024以上である。このような構成を満たす本発明の低反射部材は、360〜440nmの波長領域における反射率の最大値が6%未満であり反射率が低いため、露光精度を向上させることができる。【選択図】 なし
LOW REFLECTION MEMBER
低反射部材
TOYODA SATOSHI (author) / TAKENOSHITA HIDEHIRO (author)
2016-03-22
Patent
Electronic Resource
Japanese
IPC:
G02B
Optische Elemente, Systeme oder Geräte
,
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
/
C04B
Kalk
,
LIME
/
G03F
Fotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen
,
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
WAVE REFLECTION MEMBER AND METHOD OF CONSTRUCTING WAVE REFLECTION MEMBER
European Patent Office | 2020
|