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A platform for research: civil engineering, architecture and urbanism
METAL-CERAMIC BONDING SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metal-ceramic bonding substrate which allows for fine circuit patterning, by bonding an aluminum nitride substrate and a conductor layer effectively by a relatively thin bonding layer, while exhibiting a required heat dissipation performance, and to provide a method of manufacturing the same.SOLUTION: A metal-ceramic bonding substrate 1 is manufactured by laminating a conductor layer 3, composed of copper or a copper alloy, on at least one side of an aluminum nitride substrate 2. Between the aluminum nitride substrate 2 and conductor layer 3, a bonding layer 4 containing at least one kind of compound, selected from a group consisting of titanium nitride, zirconium nitride and hafnium nitride, is interposed, and the aluminum nitride substrate 2 and conductor layer 3 are bonded under interposition of the bonding layer 4.SELECTED DRAWING: Figure 1
【課題】窒化アルミニウム基板と導体層とを、比較的薄い厚みの接合層によって有効に接合させることにより、微細な回路パターンを形成可能とし、また所要の放熱性能を発揮することのできる金属セラミック接合基板及び、その製造方法を提供する。【解決手段】この発明の金属セラミック接合基板１は、窒化アルミニウム基板２の少なくとも一方の表面側に、銅又は銅合金からなる導体層３を積層してなるものであって、前記窒化アルミニウム基板２と導体層３との間に、窒化チタン、窒化ジルコニウム及び窒化ハフニウムからなる群から選択される少なくとも一種の化合物を含む接合層４が介在し、該接合層４の介在下で、前記窒化アルミニウム基板２と導体層３とが接合されてなるものである。【選択図】図１
METAL-CERAMIC BONDING SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metal-ceramic bonding substrate which allows for fine circuit patterning, by bonding an aluminum nitride substrate and a conductor layer effectively by a relatively thin bonding layer, while exhibiting a required heat dissipation performance, and to provide a method of manufacturing the same.SOLUTION: A metal-ceramic bonding substrate 1 is manufactured by laminating a conductor layer 3, composed of copper or a copper alloy, on at least one side of an aluminum nitride substrate 2. Between the aluminum nitride substrate 2 and conductor layer 3, a bonding layer 4 containing at least one kind of compound, selected from a group consisting of titanium nitride, zirconium nitride and hafnium nitride, is interposed, and the aluminum nitride substrate 2 and conductor layer 3 are bonded under interposition of the bonding layer 4.SELECTED DRAWING: Figure 1
【課題】窒化アルミニウム基板と導体層とを、比較的薄い厚みの接合層によって有効に接合させることにより、微細な回路パターンを形成可能とし、また所要の放熱性能を発揮することのできる金属セラミック接合基板及び、その製造方法を提供する。【解決手段】この発明の金属セラミック接合基板１は、窒化アルミニウム基板２の少なくとも一方の表面側に、銅又は銅合金からなる導体層３を積層してなるものであって、前記窒化アルミニウム基板２と導体層３との間に、窒化チタン、窒化ジルコニウム及び窒化ハフニウムからなる群から選択される少なくとも一種の化合物を含む接合層４が介在し、該接合層４の介在下で、前記窒化アルミニウム基板２と導体層３とが接合されてなるものである。【選択図】図１
METAL-CERAMIC BONDING SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME
金属セラミック接合基板及び、その製造方法
TAKAMURA HIROSHI (author) / SUZUKI SATORU (author)
2016-04-21
Patent
Electronic Resource
Japanese
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