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METAL-CERAMICS CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metal-ceramics circuit board where a metal plate is joined to a ceramic substrate by an active metal-containing brazing material, and occurrence of migration can be suppressed sufficiently, and to provide a method of manufacturing the same.SOLUTION: After forming an oxide layer 12 on the surface (at least one surface) of a ceramics substrate 10 made of aluminum nitride, by oxidizing the ceramics substrate 10, an active metal-containing brazing material 14 is applied onto the oxide layer 12, a metal plate 15 is arranged on the active metal-containing brazing material 14, a metal plate 16 is joined to the ceramics substrate 10 via the active metal-containing brazing material 14 and oxide layer 12, thereafter, a plating film 18 is formed on the exposed surface of the active metal-containing brazing material 14.SELECTED DRAWING: Figure 1
【課題】活性金属含有ろう材によりセラミックス基板に金属板を接合した金属−セラミックス回路基板において、マイグレーションの発生を十分に抑制することができる、金属−セラミックス回路基板およびその製造方法を提供する。【解決手段】窒化アルミニウムからなるセラミックス基板10を酸化してセラミックス基板10の表面(少なくとも一方の面)に酸化層12を形成した後、この酸化層12上に活性金属含有ろう材14を塗布し、この活性金属含有ろう材14上に金属板15を配置し、活性金属含有ろう材14と酸化層12を介して金属板16をセラミックス基板10に接合し、その後、活性金属含有ろう材14の露出面にめっき皮膜18を形成する。【選択図】図1
METAL-CERAMICS CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metal-ceramics circuit board where a metal plate is joined to a ceramic substrate by an active metal-containing brazing material, and occurrence of migration can be suppressed sufficiently, and to provide a method of manufacturing the same.SOLUTION: After forming an oxide layer 12 on the surface (at least one surface) of a ceramics substrate 10 made of aluminum nitride, by oxidizing the ceramics substrate 10, an active metal-containing brazing material 14 is applied onto the oxide layer 12, a metal plate 15 is arranged on the active metal-containing brazing material 14, a metal plate 16 is joined to the ceramics substrate 10 via the active metal-containing brazing material 14 and oxide layer 12, thereafter, a plating film 18 is formed on the exposed surface of the active metal-containing brazing material 14.SELECTED DRAWING: Figure 1
【課題】活性金属含有ろう材によりセラミックス基板に金属板を接合した金属−セラミックス回路基板において、マイグレーションの発生を十分に抑制することができる、金属−セラミックス回路基板およびその製造方法を提供する。【解決手段】窒化アルミニウムからなるセラミックス基板10を酸化してセラミックス基板10の表面(少なくとも一方の面)に酸化層12を形成した後、この酸化層12上に活性金属含有ろう材14を塗布し、この活性金属含有ろう材14上に金属板15を配置し、活性金属含有ろう材14と酸化層12を介して金属板16をセラミックス基板10に接合し、その後、活性金属含有ろう材14の露出面にめっき皮膜18を形成する。【選択図】図1
METAL-CERAMICS CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME
金属−セラミックス回路基板およびその製造方法
KOBAYASHI KOJI (author) / SAWABE AKIO (author) / IDENO TAKASHI (author) / FURO MASAHIRO (author)
2016-05-12
Patent
Electronic Resource
Japanese
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