A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CERAMIC STRUCTURE, AND METHOD FOR PRODUCING CERAMIC STRUCTURE
PROBLEM TO BE SOLVED: To provide a ceramic structure, when impact is applied from the outside, free from the propagation of cracks to the body of the inside of a CVD-SiC layer, and a method for producing the ceramic structure.SOLUTION: On the surface layer 31 of a CVD-SiC layer 30 formed on the surface 21 of a body 20, an SiC surface layer 40 having a hardness lower than that of the CVD-SiC layer 30 is formed. In this way, since the SiC surface layer 40 is brittle and cracks are easy to enter, by the propagation of cracks to the face direction of the SiC surface layer 40, the impact energy diffuses to the facial direction of the SiC surface layer 40, its influence on the CVD-SiC layer 30 can be reduced, and the propagation of the cracks to the body 20 can be prevented.SELECTED DRAWING: Figure 1
【課題】外部から衝撃が加わったときに、ＣＶＤ−ＳｉＣ層の内部の本体までクラックが伝搬することのないセラミック構造体およびセラミック構造体の製造方法を提供する。【解決手段】本体２０の表面２１に形成されたＣＶＤ−ＳｉＣ層３０の表層３１には、ＣＶＤ−ＳｉＣ層３０の硬度よりも低い硬度のＳiＣ表面層４０が形成されている。このため、ＳｉＣ表面層４０は脆くクラックが入り易いので、クラックがＳｉＣ表面層４０の面方向に伝搬することにより、衝撃エネルギーがＳｉＣ表面層４０の面方向に拡散して、ＣＶＤ−ＳｉＣ層３０に及ぼす影響を少なくでき、本体２０までクラックが伝搬するのを防止できる。【選択図】図１
CERAMIC STRUCTURE, AND METHOD FOR PRODUCING CERAMIC STRUCTURE
PROBLEM TO BE SOLVED: To provide a ceramic structure, when impact is applied from the outside, free from the propagation of cracks to the body of the inside of a CVD-SiC layer, and a method for producing the ceramic structure.SOLUTION: On the surface layer 31 of a CVD-SiC layer 30 formed on the surface 21 of a body 20, an SiC surface layer 40 having a hardness lower than that of the CVD-SiC layer 30 is formed. In this way, since the SiC surface layer 40 is brittle and cracks are easy to enter, by the propagation of cracks to the face direction of the SiC surface layer 40, the impact energy diffuses to the facial direction of the SiC surface layer 40, its influence on the CVD-SiC layer 30 can be reduced, and the propagation of the cracks to the body 20 can be prevented.SELECTED DRAWING: Figure 1
【課題】外部から衝撃が加わったときに、ＣＶＤ−ＳｉＣ層の内部の本体までクラックが伝搬することのないセラミック構造体およびセラミック構造体の製造方法を提供する。【解決手段】本体２０の表面２１に形成されたＣＶＤ−ＳｉＣ層３０の表層３１には、ＣＶＤ−ＳｉＣ層３０の硬度よりも低い硬度のＳiＣ表面層４０が形成されている。このため、ＳｉＣ表面層４０は脆くクラックが入り易いので、クラックがＳｉＣ表面層４０の面方向に伝搬することにより、衝撃エネルギーがＳｉＣ表面層４０の面方向に拡散して、ＣＶＤ−ＳｉＣ層３０に及ぼす影響を少なくでき、本体２０までクラックが伝搬するのを防止できる。【選択図】図１
CERAMIC STRUCTURE, AND METHOD FOR PRODUCING CERAMIC STRUCTURE
セラミック構造体およびセラミック構造体の製造方法
TAKAGI TAKASHI (author)
2016-12-08
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
/
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
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