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SiC CRUCIBLE AND SiC SINTERED BODY, AND MANUFACTURING METHOD OF SiC SINGLE CRYSTALS
PROBLEM TO BE SOLVED: To provide a manufacturing method of SiC single crystals and a crucible, by which high quality SiC single crystals with low defects can be obtained by the solution method and in which composition variation of a Si-C solution and generation of polycrystals on an inner surface of the crucible are suppressed as compared to the conventional method using a graphite crucible.SOLUTION: Provided is a manufacturing method of a crucible or sintered body whose main component is SiC, in which SiC raw material powder having oxygen content of 2000 ppm or less is molded and burned to make the oxygen content be 100 ppm or less. There is also provided a manufacturing method of silicon carbide crystals with few voids, in which the silicon carbide crystal is grown either by: using the crucible whose main component is SiC and having the oxygen content of 100 ppm or less as a housing part of a Si-C solution, and using the solution method; or accommodating the sintered body whose main component is SiC and having the oxygen content of 100 ppm or less in the crucible whose main component is SiC and having the oxygen content of 100 ppm or less or in a graphite crucible, as the housing part of the Si-C solution, and using the solution method to bring a SiC seed crystal into contact with the Si-C solution and grow the silicon carbide crystal.SELECTED DRAWING: Figure 9
【課題】従来の黒鉛坩堝を用いる方法に比べ、Ｓｉ−Ｃ溶液の組成変動や、坩堝の内壁に析出する多結晶の発生を抑制した、低欠陥で高品質なＳｉＣ単結晶を、並びに溶液法によるＳｉＣ単結晶の製造方法及び坩堝の提供。【解決手段】酸素含有量が２０００ｐｐｍ以下のＳｉＣ原料粉を成形し、焼成し、酸素含有量を１００ｐｐｍ以下とする、ＳｉＣを主成分とする坩堝又は焼結体の製造方法。Ｓｉ−Ｃ溶液の収容部として、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする坩堝を使用して、溶液法により炭化珪素結晶を成長させるか、或いは、Ｓｉ−Ｃ溶液の収容部として、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする坩堝或いは黒鉛坩堝内に、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする焼結体を収容し、溶液法によりＳｉ−Ｃ溶液にＳｉＣ種結晶を接触させて炭化珪素結晶を成長させ、ボイドの少ない炭化珪素結晶の製造方法。【選択図】図９
SiC CRUCIBLE AND SiC SINTERED BODY, AND MANUFACTURING METHOD OF SiC SINGLE CRYSTALS
PROBLEM TO BE SOLVED: To provide a manufacturing method of SiC single crystals and a crucible, by which high quality SiC single crystals with low defects can be obtained by the solution method and in which composition variation of a Si-C solution and generation of polycrystals on an inner surface of the crucible are suppressed as compared to the conventional method using a graphite crucible.SOLUTION: Provided is a manufacturing method of a crucible or sintered body whose main component is SiC, in which SiC raw material powder having oxygen content of 2000 ppm or less is molded and burned to make the oxygen content be 100 ppm or less. There is also provided a manufacturing method of silicon carbide crystals with few voids, in which the silicon carbide crystal is grown either by: using the crucible whose main component is SiC and having the oxygen content of 100 ppm or less as a housing part of a Si-C solution, and using the solution method; or accommodating the sintered body whose main component is SiC and having the oxygen content of 100 ppm or less in the crucible whose main component is SiC and having the oxygen content of 100 ppm or less or in a graphite crucible, as the housing part of the Si-C solution, and using the solution method to bring a SiC seed crystal into contact with the Si-C solution and grow the silicon carbide crystal.SELECTED DRAWING: Figure 9
【課題】従来の黒鉛坩堝を用いる方法に比べ、Ｓｉ−Ｃ溶液の組成変動や、坩堝の内壁に析出する多結晶の発生を抑制した、低欠陥で高品質なＳｉＣ単結晶を、並びに溶液法によるＳｉＣ単結晶の製造方法及び坩堝の提供。【解決手段】酸素含有量が２０００ｐｐｍ以下のＳｉＣ原料粉を成形し、焼成し、酸素含有量を１００ｐｐｍ以下とする、ＳｉＣを主成分とする坩堝又は焼結体の製造方法。Ｓｉ−Ｃ溶液の収容部として、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする坩堝を使用して、溶液法により炭化珪素結晶を成長させるか、或いは、Ｓｉ−Ｃ溶液の収容部として、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする坩堝或いは黒鉛坩堝内に、酸素含有量が１００ｐｐｍ以下のＳｉＣを主成分とする焼結体を収容し、溶液法によりＳｉ−Ｃ溶液にＳｉＣ種結晶を接触させて炭化珪素結晶を成長させ、ボイドの少ない炭化珪素結晶の製造方法。【選択図】図９
SiC CRUCIBLE AND SiC SINTERED BODY, AND MANUFACTURING METHOD OF SiC SINGLE CRYSTALS
ＳｉＣ坩堝およびＳｉＣ焼結体ならびにＳｉＣ単結晶の製造方法
SHINTANI HISAFUMI (author) / HAMAGUCHI MASARU (author) / YAMAGATA NORIO (author) / YAMADA OSAMU (author) / MINOWA TAKEHISA (author)
2017-02-09
Patent
Electronic Resource
Japanese
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