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METHOD FOR COATING REMOVAL
PROBLEM TO BE SOLVED: To provide methods for removing coatings such as EBCs from CMC substrates without unduly damaging the CMC material.SOLUTION: The method includes heating an article to a processing temperature. The article includes a first material and a second material in contact therewith, the first material comprising silicon, and the second material comprising an oxide comprising silicon. The heating is performed in an environment having a partial pressure of oxygen that is less than an equilibrium partial pressure of oxygen in chemical equilibrium between the first material and the second material at the processing temperature.SELECTED DRAWING: Figure 1
【課題】本発明は、CMC材料を過度に損傷することのない、EBCなどの皮膜をCMC基材から除去する方法を提供する。【解決手段】本発明の方法は、処理温度まで物品を加熱するステップを含む。物品は、第1の材料と、それに接触した第2の材料とを含み、第1の材料はケイ素を含み、第2の材料はケイ素含有酸化物を含む。加熱ステップは、処理温度での第1の材料と第2の材料との化学平衡における平衡酸素分圧よりも低い酸素分圧を有する環境で実施される。【選択図】図1
METHOD FOR COATING REMOVAL
PROBLEM TO BE SOLVED: To provide methods for removing coatings such as EBCs from CMC substrates without unduly damaging the CMC material.SOLUTION: The method includes heating an article to a processing temperature. The article includes a first material and a second material in contact therewith, the first material comprising silicon, and the second material comprising an oxide comprising silicon. The heating is performed in an environment having a partial pressure of oxygen that is less than an equilibrium partial pressure of oxygen in chemical equilibrium between the first material and the second material at the processing temperature.SELECTED DRAWING: Figure 1
【課題】本発明は、CMC材料を過度に損傷することのない、EBCなどの皮膜をCMC基材から除去する方法を提供する。【解決手段】本発明の方法は、処理温度まで物品を加熱するステップを含む。物品は、第1の材料と、それに接触した第2の材料とを含み、第1の材料はケイ素を含み、第2の材料はケイ素含有酸化物を含む。加熱ステップは、処理温度での第1の材料と第2の材料との化学平衡における平衡酸素分圧よりも低い酸素分圧を有する環境で実施される。【選択図】図1
METHOD FOR COATING REMOVAL
皮膜除去方法
WAN JULIN (author) / HONGBO CAO (author)
2017-04-13
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME