A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SILICON NITRIDE SINTERED SUBSTRATE AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride sintered substrate having small warpage and high strength with good yield.SOLUTION: The method for producing a silicon nitride sintered substrate is provided that has a step of molding a green sheet from a slurry containing 80 to 98.3 mass% of a silicon nitride powder, 0.7 to 10 mass% (in terms of oxide) of a Mg compound powder and 1 to 10 mass% of a rare earth compound powder, a step of freely separably depositing a plurality of green sheets thereby obtaining a deposited body, a step of sintering the green sheet by holding the obtained deposited body at a prescribed temperature in a sintering furnace while the obtained deposited body is put in a sintering container. In the method for producing a silicon nitride sintered substrate, the cooling step has a first cooling zone Pfrom a sintering holding temperature to a temperature Tof less than solidification temperature of a grain boundary phase and a second cooling zone Pfrom the temperature Tto 900°C and first average cooling speed vof the first cooling zone Pis higher than second average cooling speed vof the second cooling zone P.SELECTED DRAWING: Figure 1
【課題】 反りが小さく高い強度を有する窒化珪素焼結基板を歩留り良く製造する方法を提供する。【解決手段】 80〜98.3質量％の窒化珪素粉末、0.7〜10質量％（酸化物換算）のMg化合物粉末、及び1〜10質量％（酸化物換算）の希土類化合物粉末のスラリーからグリーンシートを成形する工程と、複数枚のグリーンシートを分離自在に堆積する工程と、得られたグリーンシート堆積体を焼成容器に入れた状態で、焼成炉内で所定の温度に保持することによりグリーンシートを焼結する工程と、得られた焼結体を焼成容器内で冷却する工程とを有し、冷却工程が、焼結保持温度から粒界相の凝固温度未満の温度T3までの第一の冷却域P3と、温度T3から900℃までの第二の冷却域P4とを有し、第一の冷却域P3の第一の平均冷却速度v1が第二の冷却域P4の第二の平均冷却速度v2より大きい窒化珪素焼結基板の製造方法。【選択図】図1
SILICON NITRIDE SINTERED SUBSTRATE AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride sintered substrate having small warpage and high strength with good yield.SOLUTION: The method for producing a silicon nitride sintered substrate is provided that has a step of molding a green sheet from a slurry containing 80 to 98.3 mass% of a silicon nitride powder, 0.7 to 10 mass% (in terms of oxide) of a Mg compound powder and 1 to 10 mass% of a rare earth compound powder, a step of freely separably depositing a plurality of green sheets thereby obtaining a deposited body, a step of sintering the green sheet by holding the obtained deposited body at a prescribed temperature in a sintering furnace while the obtained deposited body is put in a sintering container. In the method for producing a silicon nitride sintered substrate, the cooling step has a first cooling zone Pfrom a sintering holding temperature to a temperature Tof less than solidification temperature of a grain boundary phase and a second cooling zone Pfrom the temperature Tto 900°C and first average cooling speed vof the first cooling zone Pis higher than second average cooling speed vof the second cooling zone P.SELECTED DRAWING: Figure 1
【課題】 反りが小さく高い強度を有する窒化珪素焼結基板を歩留り良く製造する方法を提供する。【解決手段】 80〜98.3質量％の窒化珪素粉末、0.7〜10質量％（酸化物換算）のMg化合物粉末、及び1〜10質量％（酸化物換算）の希土類化合物粉末のスラリーからグリーンシートを成形する工程と、複数枚のグリーンシートを分離自在に堆積する工程と、得られたグリーンシート堆積体を焼成容器に入れた状態で、焼成炉内で所定の温度に保持することによりグリーンシートを焼結する工程と、得られた焼結体を焼成容器内で冷却する工程とを有し、冷却工程が、焼結保持温度から粒界相の凝固温度未満の温度T3までの第一の冷却域P3と、温度T3から900℃までの第二の冷却域P4とを有し、第一の冷却域P3の第一の平均冷却速度v1が第二の冷却域P4の第二の平均冷却速度v2より大きい窒化珪素焼結基板の製造方法。【選択図】図1
SILICON NITRIDE SINTERED SUBSTRATE AND PRODUCTION METHOD THEREOF
窒化珪素焼結基板及びその製造方法
FUJITA TAKU (author) / HAMAYOSHI SHIGEYUKI (author) / KAGA YOICHIRO (author)
2018-02-08
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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