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PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a production method of silicon nitride sintered body that can improve mechanical strength and thermal conductivity.SOLUTION: A production method of silicon nitride sintered body comprises: a mixing process of mixing a specified quantity of carbon powder to specified blending ratio of silicon nitride powder and sintering aid powder to obtain mixed powder; a primary calcination process of heating the mixed powder at primary calcination temperature of 1200°C or higher so as not to fire the mixed powder under non-oxidative atmosphere, to obtain primary calcination powder; a secondary calcination process of heating the primary calcination powder at secondary calcination temperature of 900°C or lower under oxidative atmosphere so that carbon is removed from the primary calcination powder, to obtain secondary calcination powder; a molding process of molding the secondary calcination powder into a specified shape to obtain a molded body; and a calcination process of firing the molded body under non-oxidative atmosphere to obtain a silicon nitride sintered body.SELECTED DRAWING: Figure 1
【課題】機械的強度及び熱伝導率の改善を可能とする窒化ケイ素焼結体の製造方法を提供する。【解決手段】窒化ケイ素焼結体の製造方法は、所定の配合比の窒化ケイ素粉末及び焼結助剤粉末に対して、所定量の炭素粉末を混合して混合粉末を得る混合工程と、前記混合粉末を焼成させないように、非酸化性雰囲気中で前記混合粉末を1200℃以上の第1仮焼温度で加熱して第1仮焼粉末を得る第1仮焼工程と、前記第1仮焼粉末から炭素を除去するように、酸化性雰囲気中で900℃以下の第2仮焼温度で前記第1仮焼粉末を加熱して第2仮焼粉末を得る第2仮焼工程と、前記第2仮焼粉末を所定の形状に成形して成形体を得る成形工程と、非酸化性雰囲気中で前記成形体を焼成して、窒化ケイ素焼結体を得る焼成工程と、を含む。【選択図】図1
PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a production method of silicon nitride sintered body that can improve mechanical strength and thermal conductivity.SOLUTION: A production method of silicon nitride sintered body comprises: a mixing process of mixing a specified quantity of carbon powder to specified blending ratio of silicon nitride powder and sintering aid powder to obtain mixed powder; a primary calcination process of heating the mixed powder at primary calcination temperature of 1200°C or higher so as not to fire the mixed powder under non-oxidative atmosphere, to obtain primary calcination powder; a secondary calcination process of heating the primary calcination powder at secondary calcination temperature of 900°C or lower under oxidative atmosphere so that carbon is removed from the primary calcination powder, to obtain secondary calcination powder; a molding process of molding the secondary calcination powder into a specified shape to obtain a molded body; and a calcination process of firing the molded body under non-oxidative atmosphere to obtain a silicon nitride sintered body.SELECTED DRAWING: Figure 1
【課題】機械的強度及び熱伝導率の改善を可能とする窒化ケイ素焼結体の製造方法を提供する。【解決手段】窒化ケイ素焼結体の製造方法は、所定の配合比の窒化ケイ素粉末及び焼結助剤粉末に対して、所定量の炭素粉末を混合して混合粉末を得る混合工程と、前記混合粉末を焼成させないように、非酸化性雰囲気中で前記混合粉末を1200℃以上の第1仮焼温度で加熱して第1仮焼粉末を得る第1仮焼工程と、前記第1仮焼粉末から炭素を除去するように、酸化性雰囲気中で900℃以下の第2仮焼温度で前記第1仮焼粉末を加熱して第2仮焼粉末を得る第2仮焼工程と、前記第2仮焼粉末を所定の形状に成形して成形体を得る成形工程と、非酸化性雰囲気中で前記成形体を焼成して、窒化ケイ素焼結体を得る焼成工程と、を含む。【選択図】図1
PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY
窒化ケイ素焼結体の製造方法
MATSUMOTO OSAMU (author) / TAKAHASHI MITSUTAKA (author) / KATO DAISUKE (author)
2018-05-10
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
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