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FERRITE, FERRITE SUBSTRATE, AND THIN FILM INDUCTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide ferrite high in resistance to a high temperature process, and having complex magnetic permeability suitable for a thin film inductor for treating electric signals with frequency of 1 to 25 MHz, a ferrite substrate and the thin film inductor using the same.SOLUTION: There are provided ferrite containing a main component consisting of iron oxide of 45 to 49.5 mol% in terms of FeO, zinc oxide of 19 to 25 mol% in terms of ZnO, copper oxide of 0 to 1.0 mol% in terms of CuO and the balance nickel oxide, titanium oxide of 0.5 to 2 pts.wt. in terms of TiOand cobalt oxide of 0.35 to 2 pts.wt. in terms of CoO based on 100 pts.mass of the main component, and having average crystal particle diameter of 6 μm or more, a substrate 10 consisting of the ferrite, and a thin film conductor 1 having the substrate 10 and a coil 22 arranged on the substrate 10.SELECTED DRAWING: Figure 1
【課題】高温プロセスへの耐性が高く、かつ、1〜25MHzの周波数の電気信号を処理する薄膜インダクタに好適な複素透磁率を有するフェライト、フェライト基板、及び、これを用いた薄膜インダクタの提供。【解決手段】Fe2O3に換算して45〜49.5mol%の酸化鉄、ZnOに換算して19〜25mol%未満の酸化亜鉛、CuOに換算して0〜1.0mol%の酸化銅、及び、残部の酸化ニッケルからなる主成分と、前記主成分の100質量部に対して、TiO2に換算して0.5〜2重量部の酸化チタン、及び、CoOに換算して0.35〜2重量部の酸化コバルトを含み、平均結晶粒子径が6μm以上であるフェライト及び該フェライトからなる基板10、更に基板10と基板10上に設けられたコイル22とを備える薄膜インダクタ1。【選択図】図1
FERRITE, FERRITE SUBSTRATE, AND THIN FILM INDUCTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide ferrite high in resistance to a high temperature process, and having complex magnetic permeability suitable for a thin film inductor for treating electric signals with frequency of 1 to 25 MHz, a ferrite substrate and the thin film inductor using the same.SOLUTION: There are provided ferrite containing a main component consisting of iron oxide of 45 to 49.5 mol% in terms of FeO, zinc oxide of 19 to 25 mol% in terms of ZnO, copper oxide of 0 to 1.0 mol% in terms of CuO and the balance nickel oxide, titanium oxide of 0.5 to 2 pts.wt. in terms of TiOand cobalt oxide of 0.35 to 2 pts.wt. in terms of CoO based on 100 pts.mass of the main component, and having average crystal particle diameter of 6 μm or more, a substrate 10 consisting of the ferrite, and a thin film conductor 1 having the substrate 10 and a coil 22 arranged on the substrate 10.SELECTED DRAWING: Figure 1
【課題】高温プロセスへの耐性が高く、かつ、1〜25MHzの周波数の電気信号を処理する薄膜インダクタに好適な複素透磁率を有するフェライト、フェライト基板、及び、これを用いた薄膜インダクタの提供。【解決手段】Fe2O3に換算して45〜49.5mol%の酸化鉄、ZnOに換算して19〜25mol%未満の酸化亜鉛、CuOに換算して0〜1.0mol%の酸化銅、及び、残部の酸化ニッケルからなる主成分と、前記主成分の100質量部に対して、TiO2に換算して0.5〜2重量部の酸化チタン、及び、CoOに換算して0.35〜2重量部の酸化コバルトを含み、平均結晶粒子径が6μm以上であるフェライト及び該フェライトからなる基板10、更に基板10と基板10上に設けられたコイル22とを備える薄膜インダクタ1。【選択図】図1
FERRITE, FERRITE SUBSTRATE, AND THIN FILM INDUCTOR USING THE SAME
フェライト、フェライト基板、及び、これを用いた薄膜インダクタ
KAWAGUCHI YUKIO (author) / KUBOTA KOJI (author)
2018-10-04
Patent
Electronic Resource
Japanese
FERRITE, FERRITE SUBSTRATE, AND THIN FILM INDUCTOR USING THE SAME
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