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SPUTTERING TARGET, PRODUCTION METHOD OF SPUTTERING TARGET, AMORPHOUS FILM, PRODUCTION METHOD OF AMORPHOUS FILM, CRYSTALLINE FILM AND PRODUCTION METHOD OF CRYSTALLINE FILM
PROBLEM TO BE SOLVED: To provide a high-density oxide target containing In, Ta and Ti.SOLUTION: In a sputtering target, which is an oxide target containing In, Ta and Ti, each content of Ta and Ti satisfies, in terms of an atomic ratio (at%), following formulas: Ta/(In+Ta+Ti)=0.08-0.45 at%, and Ti/(In+Ta+Ti)=0.03-1.25 at%.SELECTED DRAWING: Figure 1
【課題】Ｉｎ、Ｔａ及びＴｉを含み、且つ、高密度の酸化物ターゲットを提供する。【解決手段】Ｉｎ、Ｔａ及びＴｉを含む酸化物のターゲットであって、Ｔａ及びＴｉの含有量がそれぞれ原子比（ａｔ％）で、Ｔａ／（Ｉｎ＋Ｔａ＋Ｔｉ）＝０．０８〜０．４５ａｔ％、及び、Ｔｉ／（Ｉｎ＋Ｔａ＋Ｔｉ）＝０．０３〜１．２５ａｔ％を満たすスパッタリングターゲット。【選択図】図１
SPUTTERING TARGET, PRODUCTION METHOD OF SPUTTERING TARGET, AMORPHOUS FILM, PRODUCTION METHOD OF AMORPHOUS FILM, CRYSTALLINE FILM AND PRODUCTION METHOD OF CRYSTALLINE FILM
PROBLEM TO BE SOLVED: To provide a high-density oxide target containing In, Ta and Ti.SOLUTION: In a sputtering target, which is an oxide target containing In, Ta and Ti, each content of Ta and Ti satisfies, in terms of an atomic ratio (at%), following formulas: Ta/(In+Ta+Ti)=0.08-0.45 at%, and Ti/(In+Ta+Ti)=0.03-1.25 at%.SELECTED DRAWING: Figure 1
【課題】Ｉｎ、Ｔａ及びＴｉを含み、且つ、高密度の酸化物ターゲットを提供する。【解決手段】Ｉｎ、Ｔａ及びＴｉを含む酸化物のターゲットであって、Ｔａ及びＴｉの含有量がそれぞれ原子比（ａｔ％）で、Ｔａ／（Ｉｎ＋Ｔａ＋Ｔｉ）＝０．０８〜０．４５ａｔ％、及び、Ｔｉ／（Ｉｎ＋Ｔａ＋Ｔｉ）＝０．０３〜１．２５ａｔ％を満たすスパッタリングターゲット。【選択図】図１
SPUTTERING TARGET, PRODUCTION METHOD OF SPUTTERING TARGET, AMORPHOUS FILM, PRODUCTION METHOD OF AMORPHOUS FILM, CRYSTALLINE FILM AND PRODUCTION METHOD OF CRYSTALLINE FILM
スパッタリングターゲット、スパッタリングターゲットの製造方法、非晶質膜、非晶質膜の製造方法、結晶質膜及び結晶質膜の製造方法
KAKENO TAKASHI (author) / KUGE TOSHIHIRO (author)
2018-11-08
Patent
Electronic Resource
Japanese
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