A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
METHOD OF MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon nitride substrate capable of improving thermal conductivity and reducing cost by reducing a grain boundary phase as a result of obtaining a dense sintered body with reduced amount of a rare earth element, and a silicon nitride substrate having a high thermal conductivity in the thickness direction while maintaining excellent mechanical properties.SOLUTION: The method of manufacturing a silicon nitride substrate comprises a step of pulverizing a raw material powder containing silicon, an oxide of a rare earth element, and a magnesium compound to obtain a slurry, a step of molding the slurry into a sheet, and a step of sintering the molded body in a nitrogen atmosphere to obtain a silicon nitride sintered body. The raw material powder contains 0.5 mol% or more and less than 2 mol% of the oxide of a rare earth element and 8 mol% or more and less than 15 mol% of a magnesium compound (containing 87 mass% or more of MgSiN), and a BET specific surface area (m/g) and a median diameter D50(μm) of the silicon particles in the slurry satisfy 1.5≤BET≤4.5, 2.5≤D50≤6 and 13≤BET×D50≤18.SELECTED DRAWING: Figure 1
【課題】希土類元素を低減しても緻密な焼結体が得られ、その結果、粒界相を低減し、熱伝導率の向上及びコストダウンが可能な窒化珪素基板の製造方法、及び高い機械的特性を維持しながら、厚み方向の熱伝導率の高い窒化珪素基板を提供する。【解決手段】珪素、希土類元素酸化物及びマグネシウム化合物を含む原料粉末を粉砕しスラリーを得る工程、スラリーをシート状に成形する工程、及び成形体を窒素雰囲気中で焼結して窒化珪素焼結体とする工程を有し、原料粉末中に希土類元素酸化物を0.5 mol%以上2 mol%未満、マグネシウム化合物（87質量%以上のMgSiN2を含む）を8 mol%以上15 mol%未満含み、スラリー中の珪素粒子のBET比表面積(m2/g)及びメジアン径D50(μm)が、1.5≦BET≦4.5、2.5≦D50≦6及び13≦BET×D50≦18を満たす窒化珪素基板の製造方法。【選択図】図１
METHOD OF MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon nitride substrate capable of improving thermal conductivity and reducing cost by reducing a grain boundary phase as a result of obtaining a dense sintered body with reduced amount of a rare earth element, and a silicon nitride substrate having a high thermal conductivity in the thickness direction while maintaining excellent mechanical properties.SOLUTION: The method of manufacturing a silicon nitride substrate comprises a step of pulverizing a raw material powder containing silicon, an oxide of a rare earth element, and a magnesium compound to obtain a slurry, a step of molding the slurry into a sheet, and a step of sintering the molded body in a nitrogen atmosphere to obtain a silicon nitride sintered body. The raw material powder contains 0.5 mol% or more and less than 2 mol% of the oxide of a rare earth element and 8 mol% or more and less than 15 mol% of a magnesium compound (containing 87 mass% or more of MgSiN), and a BET specific surface area (m/g) and a median diameter D50(μm) of the silicon particles in the slurry satisfy 1.5≤BET≤4.5, 2.5≤D50≤6 and 13≤BET×D50≤18.SELECTED DRAWING: Figure 1
【課題】希土類元素を低減しても緻密な焼結体が得られ、その結果、粒界相を低減し、熱伝導率の向上及びコストダウンが可能な窒化珪素基板の製造方法、及び高い機械的特性を維持しながら、厚み方向の熱伝導率の高い窒化珪素基板を提供する。【解決手段】珪素、希土類元素酸化物及びマグネシウム化合物を含む原料粉末を粉砕しスラリーを得る工程、スラリーをシート状に成形する工程、及び成形体を窒素雰囲気中で焼結して窒化珪素焼結体とする工程を有し、原料粉末中に希土類元素酸化物を0.5 mol%以上2 mol%未満、マグネシウム化合物（87質量%以上のMgSiN2を含む）を8 mol%以上15 mol%未満含み、スラリー中の珪素粒子のBET比表面積(m2/g)及びメジアン径D50(μm)が、1.5≦BET≦4.5、2.5≦D50≦6及び13≦BET×D50≦18を満たす窒化珪素基板の製造方法。【選択図】図１
METHOD OF MANUFACTURING SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE SUBSTRATE
窒化珪素基板の製造方法、及び窒化珪素基板
KAGA YOICHIRO (author) / GONDA MASAYUKI (author) / ITO HIROYUKI (author)
2018-11-22
Patent
Electronic Resource
Japanese
| European Patent Office | 2023
Method for manufacturing silicon nitride substrate and silicon nitride substrate therefrom
European Patent Office | 2024
Method for manufacturing silicon nitride substrate and silicon nitride substrate therefrom
| European Patent Office | 2022