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ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
To provide an electrode plate for a plasma processing apparatus and a manufacturing method of an electrode plate for a plasma processing apparatus which are less likely to generate particles even when being used as an electrode of a plasma processing apparatus for a long time.SOLUTION: An electrode plate for a plasma processing apparatus includes a first through hole which is made of a plate-shaped silicon carbide sintered body and penetrates the silicon carbide sintered body in the thickness direction, a base member having an expanded portion formed in at least one end portion of the first through hole and having a larger diameter than the first through hole, a dense silicon carbide layer formed on the surface of the base material on the side where the extended portion is formed, and a second through hole penetrating the dense silicon carbide layer in the thickness direction and connected to the first through hole.SELECTED DRAWING: Figure 1
【課題】プラズマ処理装置の電極として長時間にわたって使用してもパーティクルが発生しにくいプラズマ処理装置用電極板およびプラズマ処理装置用電極板の製造方法を提供する。【解決手段】プラズマ処理装置用電極板は、板状の炭化珪素焼結体からなり、前記炭化珪素焼結体を厚さ方向に貫通する第１貫通孔と、前記第１貫通孔の少なくとも一方の端部に形成されている直径が前記第１貫通孔よりも大きい拡張部を有する基材と、前記基材の前記拡張部が形成されている側の表面に形成されている緻密炭化珪素層と、前記緻密炭化珪素層を厚さ方向に貫通し、前記第１貫通孔に接続する第２貫通孔と、を有する。【選択図】図１
ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
To provide an electrode plate for a plasma processing apparatus and a manufacturing method of an electrode plate for a plasma processing apparatus which are less likely to generate particles even when being used as an electrode of a plasma processing apparatus for a long time.SOLUTION: An electrode plate for a plasma processing apparatus includes a first through hole which is made of a plate-shaped silicon carbide sintered body and penetrates the silicon carbide sintered body in the thickness direction, a base member having an expanded portion formed in at least one end portion of the first through hole and having a larger diameter than the first through hole, a dense silicon carbide layer formed on the surface of the base material on the side where the extended portion is formed, and a second through hole penetrating the dense silicon carbide layer in the thickness direction and connected to the first through hole.SELECTED DRAWING: Figure 1
【課題】プラズマ処理装置の電極として長時間にわたって使用してもパーティクルが発生しにくいプラズマ処理装置用電極板およびプラズマ処理装置用電極板の製造方法を提供する。【解決手段】プラズマ処理装置用電極板は、板状の炭化珪素焼結体からなり、前記炭化珪素焼結体を厚さ方向に貫通する第１貫通孔と、前記第１貫通孔の少なくとも一方の端部に形成されている直径が前記第１貫通孔よりも大きい拡張部を有する基材と、前記基材の前記拡張部が形成されている側の表面に形成されている緻密炭化珪素層と、前記緻密炭化珪素層を厚さ方向に貫通し、前記第１貫通孔に接続する第２貫通孔と、を有する。【選択図】図１
ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS
プラズマ処理装置用電極板およびプラズマ処理装置用電極板の製造方法
TAKAHATA KOTA (author)
2019-01-17
Patent
Electronic Resource
Japanese
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