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ELECTRODE PLATE FOR PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
To provide: an electrode plate for a plasma processing device, in which a SiC sintered body and a dense silicon carbide layer are hardly peeled; and a method for manufacturing the electrode plate.SOLUTION: An electrode plate for a plasma processing device comprises: a YO-containing SiC sintered body 12 including YOand SiC; and a dense silicon carbide layer 16 provided on at least one surface of the YO-containing SiC sintered body 12. The YO-containing SiC sintered body 12 has: a Y-high concentration sintered base material 13 in which the Y concentration falls in a range of 0.3 mass% or more and 7 mass% or less; and a Y-low concentration sintered layer 14 provided on at least one surface of the Y-high concentration sintered base material 13, in which the Y concentration is lower than that of the Y-high concentration sintered base material 13. The Y-low concentration sintered layer 14 has a thickness in a range of 1.0 mm or more and 1.9 mm or less. The dense silicon carbide layer 16 is provided on the surface on the side of the Y-low concentration sintered layer 14.SELECTED DRAWING: Figure 3
【課題】ＳｉＣ焼結体と緻密質炭化珪素層とが剥がれにくいプラズマ処理装置用電極板及びその製造方法を提供する。【解決手段】Ｙ２Ｏ３とＳｉＣとを含むＹ２Ｏ３含有ＳｉＣ焼結体１２と、Ｙ２Ｏ３含有ＳｉＣ焼結体１２の少なくとも一方の表面に備えられている緻密質炭化珪素層１６とを有するプラズマ処理装置用電極板であって、Ｙ２Ｏ３含有ＳｉＣ焼結体１２は、Ｙ濃度が０．３質量％以上７質量％以下の範囲にあるＹ高濃度焼結基材１３と、Ｙ高濃度焼結基材１３の少なくとも一方の表面に備えられているＹ濃度がＹ高濃度焼結基材１３よりも低いＹ低濃度焼結層１４とを有し、Ｙ低濃度焼結層１４は厚さが１．０ｍｍ以上１．９ｍｍ以下の範囲にあり、緻密質炭化珪素層１６は、Ｙ低濃度焼結層１４側の表面に備えられているプラズマ処理装置用電極板。【選択図】図３
ELECTRODE PLATE FOR PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
To provide: an electrode plate for a plasma processing device, in which a SiC sintered body and a dense silicon carbide layer are hardly peeled; and a method for manufacturing the electrode plate.SOLUTION: An electrode plate for a plasma processing device comprises: a YO-containing SiC sintered body 12 including YOand SiC; and a dense silicon carbide layer 16 provided on at least one surface of the YO-containing SiC sintered body 12. The YO-containing SiC sintered body 12 has: a Y-high concentration sintered base material 13 in which the Y concentration falls in a range of 0.3 mass% or more and 7 mass% or less; and a Y-low concentration sintered layer 14 provided on at least one surface of the Y-high concentration sintered base material 13, in which the Y concentration is lower than that of the Y-high concentration sintered base material 13. The Y-low concentration sintered layer 14 has a thickness in a range of 1.0 mm or more and 1.9 mm or less. The dense silicon carbide layer 16 is provided on the surface on the side of the Y-low concentration sintered layer 14.SELECTED DRAWING: Figure 3
【課題】ＳｉＣ焼結体と緻密質炭化珪素層とが剥がれにくいプラズマ処理装置用電極板及びその製造方法を提供する。【解決手段】Ｙ２Ｏ３とＳｉＣとを含むＹ２Ｏ３含有ＳｉＣ焼結体１２と、Ｙ２Ｏ３含有ＳｉＣ焼結体１２の少なくとも一方の表面に備えられている緻密質炭化珪素層１６とを有するプラズマ処理装置用電極板であって、Ｙ２Ｏ３含有ＳｉＣ焼結体１２は、Ｙ濃度が０．３質量％以上７質量％以下の範囲にあるＹ高濃度焼結基材１３と、Ｙ高濃度焼結基材１３の少なくとも一方の表面に備えられているＹ濃度がＹ高濃度焼結基材１３よりも低いＹ低濃度焼結層１４とを有し、Ｙ低濃度焼結層１４は厚さが１．０ｍｍ以上１．９ｍｍ以下の範囲にあり、緻密質炭化珪素層１６は、Ｙ低濃度焼結層１４側の表面に備えられているプラズマ処理装置用電極板。【選択図】図３
ELECTRODE PLATE FOR PLASMA PROCESSING DEVICE, AND METHOD FOR MANUFACTURING THE SAME
プラズマ処理装置用電極板およびプラズマ処理装置用電極板の製造方法
NOMURA SATOSHI (author) / FUJIMORI SHUJI (author)
2019-06-27
Patent
Electronic Resource
Japanese
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