A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
PRODUCTION METHOD OF SILICON CARBIDE MEMBER
To provide a production method of silicon carbide member capable of jointing a silicon carbide sintered body and a silicon carbide body formed by a CVD method without interposing a joint material.SOLUTION: The method includes: a first polish step S1 of polishing a joint area 11 of a first silicon carbide member 10 composed of a silicon carbide sintered body; a second polish step S2 of polishing a second joint area 21 of a second silicon carbide member 20 formed by a chemical vapor growth method; and a junction step S3 of jointing the first silicon carbide member 10 and the second silicon carbide member 20 with heating, while pressurizing contacted jointing areas 11, 21 by pressing the first silicon carbide member 10 and the second silicon carbide member 20 toward each joint area 11, 21 with the joint areas 11, 21 directly contacted to each other under inert atmosphere.SELECTED DRAWING: Figure 1
【課題】接合材を介することなく、炭化珪素焼結体とＣＶＤ法により形成した炭化珪素体とを接合することが可能な炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素焼結体からなる第１の炭化珪素部材１０の接合面１１を研磨する第１の研磨工程Ｓ１と、化学的気相成長法により形成した第２の炭化珪素部材２０の接合面２１を研磨する第２の研磨工程Ｓ２と、不活性雰囲気下で、接合面１１，２１を直接的に当接させ、第１の炭化珪素部材１０と第２の炭化珪素部材２０とをそれぞれの接合面１１，２１に向けて押圧することにより、当接した接合面１１，２１に圧力をかけながら、加熱することにより、第１の炭化珪素部材１０と第２の炭化珪素部材２０とを接合する接合工程Ｓ３とを有する。【選択図】図１
PRODUCTION METHOD OF SILICON CARBIDE MEMBER
To provide a production method of silicon carbide member capable of jointing a silicon carbide sintered body and a silicon carbide body formed by a CVD method without interposing a joint material.SOLUTION: The method includes: a first polish step S1 of polishing a joint area 11 of a first silicon carbide member 10 composed of a silicon carbide sintered body; a second polish step S2 of polishing a second joint area 21 of a second silicon carbide member 20 formed by a chemical vapor growth method; and a junction step S3 of jointing the first silicon carbide member 10 and the second silicon carbide member 20 with heating, while pressurizing contacted jointing areas 11, 21 by pressing the first silicon carbide member 10 and the second silicon carbide member 20 toward each joint area 11, 21 with the joint areas 11, 21 directly contacted to each other under inert atmosphere.SELECTED DRAWING: Figure 1
【課題】接合材を介することなく、炭化珪素焼結体とＣＶＤ法により形成した炭化珪素体とを接合することが可能な炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素焼結体からなる第１の炭化珪素部材１０の接合面１１を研磨する第１の研磨工程Ｓ１と、化学的気相成長法により形成した第２の炭化珪素部材２０の接合面２１を研磨する第２の研磨工程Ｓ２と、不活性雰囲気下で、接合面１１，２１を直接的に当接させ、第１の炭化珪素部材１０と第２の炭化珪素部材２０とをそれぞれの接合面１１，２１に向けて押圧することにより、当接した接合面１１，２１に圧力をかけながら、加熱することにより、第１の炭化珪素部材１０と第２の炭化珪素部材２０とを接合する接合工程Ｓ３とを有する。【選択図】図１
PRODUCTION METHOD OF SILICON CARBIDE MEMBER
炭化珪素部材の製造方法
SATO KEISUKE (author) / SATO RYOTA (author)
2019-04-11
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2015