A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SILICON NITRIDE SINTERED SUBSTRATE
To provide a large-size silicon nitride sintered substrate excellent in thermal conductivity and further excellent in mechanical strength (bending strength and fracture toughness).SOLUTION: A silicon nitride sintered substrate has a circular main surface with a diameter of 2 inches or more, wherein: a ratio dc/de between density dc in a center portion of the main surface and density de in an end portion thereof is 0.98 or more and 1.0 or less; void fraction vc in the center portion thereof is 1.80% or less; void fraction ve in the end portion thereof is 1.00% or less; and surface roughness Sa of the main surface is 0.7 μm or less.SELECTED DRAWING: Figure 1(a)
【課題】大型で、熱伝導性に優れるとともに、機械的強度（曲げ強度及び破壊靱性）に優れた窒化ケイ素焼結基板を提供する。【解決手段】直径２インチ以上の円形の主面を有し、前記主面における中央部の密度ｄｃと端部の密度ｄｅの比ｄｃ/ｄｅが０．９８以上かつ１．０以下であり、前記主面における中央部のボイド率ｖｃが１．８０％以下であり、端部のボイド率ｖｅが１．００％以下であり、前記主面の表面粗さＳａが０．７μｍ以下であることを特徴とする窒化ケイ素焼結基板。【選択図】図１(a)
SILICON NITRIDE SINTERED SUBSTRATE
To provide a large-size silicon nitride sintered substrate excellent in thermal conductivity and further excellent in mechanical strength (bending strength and fracture toughness).SOLUTION: A silicon nitride sintered substrate has a circular main surface with a diameter of 2 inches or more, wherein: a ratio dc/de between density dc in a center portion of the main surface and density de in an end portion thereof is 0.98 or more and 1.0 or less; void fraction vc in the center portion thereof is 1.80% or less; void fraction ve in the end portion thereof is 1.00% or less; and surface roughness Sa of the main surface is 0.7 μm or less.SELECTED DRAWING: Figure 1(a)
【課題】大型で、熱伝導性に優れるとともに、機械的強度（曲げ強度及び破壊靱性）に優れた窒化ケイ素焼結基板を提供する。【解決手段】直径２インチ以上の円形の主面を有し、前記主面における中央部の密度ｄｃと端部の密度ｄｅの比ｄｃ/ｄｅが０．９８以上かつ１．０以下であり、前記主面における中央部のボイド率ｖｃが１．８０％以下であり、端部のボイド率ｖｅが１．００％以下であり、前記主面の表面粗さＳａが０．７μｍ以下であることを特徴とする窒化ケイ素焼結基板。【選択図】図１(a)
SILICON NITRIDE SINTERED SUBSTRATE
窒化ケイ素焼結基板
HAMAYOSHI SHIGEYUKI (author)
2019-04-18
Patent
Electronic Resource
Japanese
| European Patent Office | 2020
| European Patent Office | 2017
| European Patent Office | 2019
| European Patent Office | 2020