A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an amorphous semiconductor thin film even when an In content is increased, and a sputtering target.SOLUTION: The present invention provides an oxide sintered body in which an atomic ratio of In elements, Sn elements, Zn elements, and heavy rare earth elements (HREEs: described as X) satisfy the following formulae (1) to (4), a bixbyite structure represented by InOis the main component, and a pyrochlore structure is also included. 0.50≤In/(In+Sn+Zn)≤0.85 (1), 0.10≤Sn/(In+Sn+Zn)≤0.45 (2), 0.05≤Zn/(In+Sn+Zn)≤0.25 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING: None
【課題】Ｉｎ含有量を増やしても非晶質半導体薄膜を形成できる酸化物焼結体およびスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｓｎ元素、Ｚｎ元素、および重希土類元素（HREE：heavy rare earth element：Ｘと記載する）の原子比が下記の式（１）から（４）を満たし、Ｉｎ2Ｏ3で表されるビックスバイト構造を主成分とし、パイロクロア構造を含む酸化物焼結体。０．５０≦Ｉｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．８５ ・・・（１）０．１０≦Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．４５ ・・・（２）０．０５≦Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２５ ・・・（３）０．０５≦Ｘ／（Ｉｎ＋Ｓｎ＋Ｚｎ＋Ｘ）≦０．２５ ・・・（４）ただし、重希土類元素とは、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、ＹｂおよびＬｕから選ばれる１種以上の元素を意味する。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an amorphous semiconductor thin film even when an In content is increased, and a sputtering target.SOLUTION: The present invention provides an oxide sintered body in which an atomic ratio of In elements, Sn elements, Zn elements, and heavy rare earth elements (HREEs: described as X) satisfy the following formulae (1) to (4), a bixbyite structure represented by InOis the main component, and a pyrochlore structure is also included. 0.50≤In/(In+Sn+Zn)≤0.85 (1), 0.10≤Sn/(In+Sn+Zn)≤0.45 (2), 0.05≤Zn/(In+Sn+Zn)≤0.25 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING: None
【課題】Ｉｎ含有量を増やしても非晶質半導体薄膜を形成できる酸化物焼結体およびスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｓｎ元素、Ｚｎ元素、および重希土類元素（HREE：heavy rare earth element：Ｘと記載する）の原子比が下記の式（１）から（４）を満たし、Ｉｎ2Ｏ3で表されるビックスバイト構造を主成分とし、パイロクロア構造を含む酸化物焼結体。０．５０≦Ｉｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．８５ ・・・（１）０．１０≦Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．４５ ・・・（２）０．０５≦Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２５ ・・・（３）０．０５≦Ｘ／（Ｉｎ＋Ｓｎ＋Ｚｎ＋Ｘ）≦０．２５ ・・・（４）ただし、重希土類元素とは、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、ＹｂおよびＬｕから選ばれる１種以上の元素を意味する。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、非晶質酸化物半導体薄膜、および薄膜トランジスタ
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author)
2019-04-25
Patent
Electronic Resource
Japanese
| European Patent Office | 2019
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
| European Patent Office | 2019
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
| European Patent Office | 2019
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
| European Patent Office | 2019
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
| European Patent Office | 2018