A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
An oxide semiconductor film which contains In, Ga and Sn at atomic ratios expressed by formula (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, formula (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 and formula (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, while containing a rare earth element X at an atomic ratio expressed by formula (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
La présente invention concerne un film d'oxyde semi-conducteur contenant de l'In, du Ga et du Sn dans des rapports atomiques exprimés par la formule (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, la formule (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 et la formule (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, tout en contenant un élément des terres rares X en un rapport atomique exprimé par la formule (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
Ｉｎ、Ｇａ及びＳｎを下記原子比 ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０ ・・・（１） ０．０１≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４０ ・・・（２） ０．５５≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．９８ ・・・（３） で含有し、 かつ、レアアース元素Ｘを下記原子比 ０．０３≦Ｘ／（Ｉｎ＋Ｇａ＋Ｓｎ＋Ｘ）≦０．２５ ・・・（４） で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
An oxide semiconductor film which contains In, Ga and Sn at atomic ratios expressed by formula (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, formula (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 and formula (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, while containing a rare earth element X at an atomic ratio expressed by formula (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
La présente invention concerne un film d'oxyde semi-conducteur contenant de l'In, du Ga et du Sn dans des rapports atomiques exprimés par la formule (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, la formule (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 et la formule (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, tout en contenant un élément des terres rares X en un rapport atomique exprimé par la formule (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
Ｉｎ、Ｇａ及びＳｎを下記原子比 ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．３０ ・・・（１） ０．０１≦Ｓｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．４０ ・・・（２） ０．５５≦Ｉｎ／（Ｉｎ＋Ｇａ＋Ｓｎ）≦０．９８ ・・・（３） で含有し、 かつ、レアアース元素Ｘを下記原子比 ０．０３≦Ｘ／（Ｉｎ＋Ｇａ＋Ｓｎ＋Ｘ）≦０．２５ ・・・（４） で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
FILM D'OXYDE SEMI-CONDUCTEUR, TRANSISTOR EN COUCHES MINCES, CORPS D'OXYDE FRITTÉ ET CIBLE DE PULVÉRISATION
酸化物半導体膜、薄膜トランジスタ、酸化物焼結体及びスパッタリングターゲット
INOUE KAZUYOSHI (author) / MASATOSHI SHIBATA (author)
2018-08-30
Patent
Electronic Resource
Japanese
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