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OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
An oxide semiconductor film which contains In, Ga and Sn at atomic ratios expressed by formula (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, formula (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 and formula (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, while containing a rare earth element X at an atomic ratio expressed by formula (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
La présente invention concerne un film d'oxyde semi-conducteur contenant de l'In, du Ga et du Sn dans des rapports atomiques exprimés par la formule (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, la formule (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 et la formule (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, tout en contenant un élément des terres rares X en un rapport atomique exprimé par la formule (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
In、Ga及びSnを下記原子比 0.01≦Ga/(In+Ga+Sn)≦0.30 ・・・(1) 0.01≦Sn/(In+Ga+Sn)≦0.40 ・・・(2) 0.55≦In/(In+Ga+Sn)≦0.98 ・・・(3) で含有し、 かつ、レアアース元素Xを下記原子比 0.03≦X/(In+Ga+Sn+X)≦0.25 ・・・(4) で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
An oxide semiconductor film which contains In, Ga and Sn at atomic ratios expressed by formula (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, formula (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 and formula (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, while containing a rare earth element X at an atomic ratio expressed by formula (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
La présente invention concerne un film d'oxyde semi-conducteur contenant de l'In, du Ga et du Sn dans des rapports atomiques exprimés par la formule (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, la formule (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 et la formule (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, tout en contenant un élément des terres rares X en un rapport atomique exprimé par la formule (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25.
In、Ga及びSnを下記原子比 0.01≦Ga/(In+Ga+Sn)≦0.30 ・・・(1) 0.01≦Sn/(In+Ga+Sn)≦0.40 ・・・(2) 0.55≦In/(In+Ga+Sn)≦0.98 ・・・(3) で含有し、 かつ、レアアース元素Xを下記原子比 0.03≦X/(In+Ga+Sn+X)≦0.25 ・・・(4) で含有する酸化物半導体膜。
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
FILM D'OXYDE SEMI-CONDUCTEUR, TRANSISTOR EN COUCHES MINCES, CORPS D'OXYDE FRITTÉ ET CIBLE DE PULVÉRISATION
酸化物半導体膜、薄膜トランジスタ、酸化物焼結体及びスパッタリングターゲット
INOUE KAZUYOSHI (author) / MASATOSHI SHIBATA (author)
2018-08-30
Patent
Electronic Resource
Japanese
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