A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an amorphous oxide semiconductor thin film that can ensure strength and has excellent TFT performance even when light rare earth elements are added, and a sputtering target.SOLUTION: The present invention provides an oxide sintered body in which an atomic ratio of In elements, Zn elements, Sn elements, and light rare earth elements (LREEs: described as X) satisfy the following formulae (1) to (4), and a bixbyite structure represented by InOis the main component. 0.55≤In/(In+Sn+Zn)≤0.90 (1), 0.05≤Sn/(In+Sn+Zn)≤0.25 (2), 0.05≤Zn/(In+Sn+Zn)≤0.20 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the light rare earth elements denote at least one element selected from La, Nd, Sm, and Eu.SELECTED DRAWING: None
【課題】軽希土類元素を添加した場合で、強度を確保でき、ＴＦＴ性能に優れた非晶質酸化物半導体薄膜を成膜できる酸化物焼結体及びスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及び軽希土類元素（ＬＲＥＥ：Ｘと記載する）の原子比が式（１）〜（４）を満たし、Ｉｎ2Ｏ3で表されるビックスバイト構造を主成分としてなる酸化物焼結体。０．５５≦Ｉｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．９０・・・（１）、０．０５≦Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２５・・・（２）、０．０５≦Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２０・・・（３）、０．０５≦Ｘ／（Ｉｎ＋Ｓｎ＋Ｚｎ＋Ｘ）≦０．２５・・・（４）。ただし、軽希土類元素は、Ｌａ、Ｎｄ、Ｓｍ、およびＥｕから選ばれる１種以上の元素である。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
To provide an oxide sintered body that can form an amorphous oxide semiconductor thin film that can ensure strength and has excellent TFT performance even when light rare earth elements are added, and a sputtering target.SOLUTION: The present invention provides an oxide sintered body in which an atomic ratio of In elements, Zn elements, Sn elements, and light rare earth elements (LREEs: described as X) satisfy the following formulae (1) to (4), and a bixbyite structure represented by InOis the main component. 0.55≤In/(In+Sn+Zn)≤0.90 (1), 0.05≤Sn/(In+Sn+Zn)≤0.25 (2), 0.05≤Zn/(In+Sn+Zn)≤0.20 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the light rare earth elements denote at least one element selected from La, Nd, Sm, and Eu.SELECTED DRAWING: None
【課題】軽希土類元素を添加した場合で、強度を確保でき、ＴＦＴ性能に優れた非晶質酸化物半導体薄膜を成膜できる酸化物焼結体及びスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及び軽希土類元素（ＬＲＥＥ：Ｘと記載する）の原子比が式（１）〜（４）を満たし、Ｉｎ2Ｏ3で表されるビックスバイト構造を主成分としてなる酸化物焼結体。０．５５≦Ｉｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．９０・・・（１）、０．０５≦Ｓｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２５・・・（２）、０．０５≦Ｚｎ／（Ｉｎ＋Ｓｎ＋Ｚｎ）≦０．２０・・・（３）、０．０５≦Ｘ／（Ｉｎ＋Ｓｎ＋Ｚｎ＋Ｘ）≦０．２５・・・（４）。ただし、軽希土類元素は、Ｌａ、Ｎｄ、Ｓｍ、およびＥｕから選ばれる１種以上の元素である。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、非晶質酸化物半導体薄膜、および薄膜トランジスタ
INOUE KAZUYOSHI (author) / SHIBATA MASATOSHI (author)
2019-04-25
Patent
Electronic Resource
Japanese
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