A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SPUTTERING TARGET
To provide an oxide sputtering target having a sufficiently low specific resistance value, capable of performing DC (direct-current) sputtering stably, and depositing an oxide film having a smooth surface and capable of keeping the surface smooth even when being heated.SOLUTION: In an oxide sputtering target comprising an oxide containing Si, Zr and at least either of Nb and Ti as metal elements, when expressing, as a relative value to the total atomic number of Si, Nb, Ti and Zr, an atomic ratio of Si as a, an atomic ratio of Nb as b, an atomic ratio of Ti is c, and an atomic ratio of Zr is d, formula (1): f(1)=(b/2)/(1-b/2)+c/(1-b/2)≥0.35, formula (2): 0.3≥f(2)=a/(1-b/2)≥0.1, and formula (3): f(3)=d/(1-b/2)≥0.1 are satisfied.SELECTED DRAWING: None
【課題】比抵抗値が十分に低く安定してＤＣ（直流）スパッタが可能であり、表面が平滑で、かつ、熱を加えた場合でも表面が平滑な酸化物膜を成膜可能な酸化物スパッタリングターゲットを提供する。【解決手段】金属元素として、Ｓｉと、Ｚｒと、ＮｂおよびＴｉの少なくともいずれかと、を含む酸化物からなり、Ｓｉ、Ｎｂ、Ｔｉ及びＺｒの全原子数に対するＳｉの原子数比をａ、Ｎｂの原子数比をｂ、Ｔｉの原子数比をｃ、Ｚｒの原子数比をｄとした場合に、（１）式：ｆ（１）＝（ｂ／２）／（１−ｂ／２）＋ｃ／（１−ｂ／２）≧０．３５、（２）式：０．３≧ｆ（２）＝ａ／（１−ｂ／２）≧０．１、（３）式：ｆ（３）＝ｄ／（１−ｂ／２）≧０．１を満足する。【選択図】なし
OXIDE SPUTTERING TARGET
To provide an oxide sputtering target having a sufficiently low specific resistance value, capable of performing DC (direct-current) sputtering stably, and depositing an oxide film having a smooth surface and capable of keeping the surface smooth even when being heated.SOLUTION: In an oxide sputtering target comprising an oxide containing Si, Zr and at least either of Nb and Ti as metal elements, when expressing, as a relative value to the total atomic number of Si, Nb, Ti and Zr, an atomic ratio of Si as a, an atomic ratio of Nb as b, an atomic ratio of Ti is c, and an atomic ratio of Zr is d, formula (1): f(1)=(b/2)/(1-b/2)+c/(1-b/2)≥0.35, formula (2): 0.3≥f(2)=a/(1-b/2)≥0.1, and formula (3): f(3)=d/(1-b/2)≥0.1 are satisfied.SELECTED DRAWING: None
【課題】比抵抗値が十分に低く安定してＤＣ（直流）スパッタが可能であり、表面が平滑で、かつ、熱を加えた場合でも表面が平滑な酸化物膜を成膜可能な酸化物スパッタリングターゲットを提供する。【解決手段】金属元素として、Ｓｉと、Ｚｒと、ＮｂおよびＴｉの少なくともいずれかと、を含む酸化物からなり、Ｓｉ、Ｎｂ、Ｔｉ及びＺｒの全原子数に対するＳｉの原子数比をａ、Ｎｂの原子数比をｂ、Ｔｉの原子数比をｃ、Ｚｒの原子数比をｄとした場合に、（１）式：ｆ（１）＝（ｂ／２）／（１−ｂ／２）＋ｃ／（１−ｂ／２）≧０．３５、（２）式：０．３≧ｆ（２）＝ａ／（１−ｂ／２）≧０．１、（３）式：ｆ（３）＝ｄ／（１−ｂ／２）≧０．１を満足する。【選択図】なし
OXIDE SPUTTERING TARGET
酸化物スパッタリングターゲット
MORI RIE (author) / OTOMO KENJI (author)
2019-07-11
Patent
Electronic Resource
Japanese
OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
| European Patent Office | 2021
OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
| European Patent Office | 2021