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A platform for research: civil engineering, architecture and urbanism
PRODUCTION METHOD OF SiC-COATED SILICEOUS MATERIAL, AND SiC-COATED SILICEOUS MATERIAL
To provide a production method of a SiC-coated siliceous material capable of forming a strong CVD-SiC coating on a silicon or siliceous substrate.SOLUTION: A production method of a SiC-coated siliceous material comprises the first membrane production step for coating a siliceous substrate with the first SiC layer at a temperature of 1,150°C or lower, and the second membrane production step for coating the siliceous substrate with the second SiC layer by a CVD method at a temperature of 1,200-1,400°C.SELECTED DRAWING: Figure 2
【課題】シリコンあるいはケイ素質の基材の上に強固なＣＶＤ−ＳｉＣ被覆を形成することのできる、ＳｉＣ被覆ケイ素質材の製造方法を提供する。【解決手段】ケイ素質基材に１１５０℃以下の温度で第１のＳｉＣ層を被覆する第１製膜工程と、ケイ素質基材に１２００〜１４００℃の温度で第２のＳｉＣ層をＣＶＤ法で被覆する第２製膜工程と、からなることを特徴とするＳｉＣ被覆ケイ素質材の製造方法。【選択図】図２
PRODUCTION METHOD OF SiC-COATED SILICEOUS MATERIAL, AND SiC-COATED SILICEOUS MATERIAL
To provide a production method of a SiC-coated siliceous material capable of forming a strong CVD-SiC coating on a silicon or siliceous substrate.SOLUTION: A production method of a SiC-coated siliceous material comprises the first membrane production step for coating a siliceous substrate with the first SiC layer at a temperature of 1,150°C or lower, and the second membrane production step for coating the siliceous substrate with the second SiC layer by a CVD method at a temperature of 1,200-1,400°C.SELECTED DRAWING: Figure 2
【課題】シリコンあるいはケイ素質の基材の上に強固なＣＶＤ−ＳｉＣ被覆を形成することのできる、ＳｉＣ被覆ケイ素質材の製造方法を提供する。【解決手段】ケイ素質基材に１１５０℃以下の温度で第１のＳｉＣ層を被覆する第１製膜工程と、ケイ素質基材に１２００〜１４００℃の温度で第２のＳｉＣ層をＣＶＤ法で被覆する第２製膜工程と、からなることを特徴とするＳｉＣ被覆ケイ素質材の製造方法。【選択図】図２
PRODUCTION METHOD OF SiC-COATED SILICEOUS MATERIAL, AND SiC-COATED SILICEOUS MATERIAL
ＳｉＣ被覆ケイ素質材の製造方法、及び、ＳｉＣ被覆ケイ素質材
ISHIBASHI YUKI (author)
2019-09-19
Patent
Electronic Resource
Japanese
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