A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
CERAMIC-METAL CONJUGATE AND MANUFACTURING METHOD THEREOF, DIELECTRIC CIRCUIT BOARD, AND POWER MODULE
To provide a structure for reduction of strain in an interface reaction layer formed between a ceramic and a ceramic surface.SOLUTION: A structure includes a ceramic member, a metallic member, and an active metal brazing material involving at least one kinds selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mg, Ca, Y, Ce, La, Sm, Yb, Nd, Gd, and Er as an active metal species, wherein the ceramic member and the metallic member is bonded to each other via the active metal brazing material, an interface reaction layer is formed between the active metal brazing material and the ceramic member, and the closest same species atomic distance of crystal planes in a bonding interface of the interface reaction layer and the ceramic member is 30% or under based on the closest same species atomic distance of crystal planes of the ceramic member.SELECTED DRAWING: Figure 4
【課題】セラミックスとセラミックス表面に形成する界面反応層のひずみが低減される構造を提供する。【解決手段】セラミックス部材と、金属部材と、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｍｇ、Ｃａ、Ｙ、Ｃｅ、Ｌa、Ｓｍ、Ｙｂ、Ｎｄ、Ｇｄ、Ｅｒのいずれか１種以上を活性金属種として含む活性金属ろう材と、を有し、前記セラミックス部材と前記金属部材とが、前記活性金属ろう材を介して接合されており、前記活性金属ろう材と前記セラミックス部材との間に界面反応層が形成されており、前記界面反応層と前記セラミックス部材との接合界面の結晶面の最近接同種原子間距離が、前記セラミックス部材の結晶面の最近接同種原子間距離を基準として３０％以内である。【選択図】図４
CERAMIC-METAL CONJUGATE AND MANUFACTURING METHOD THEREOF, DIELECTRIC CIRCUIT BOARD, AND POWER MODULE
To provide a structure for reduction of strain in an interface reaction layer formed between a ceramic and a ceramic surface.SOLUTION: A structure includes a ceramic member, a metallic member, and an active metal brazing material involving at least one kinds selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mg, Ca, Y, Ce, La, Sm, Yb, Nd, Gd, and Er as an active metal species, wherein the ceramic member and the metallic member is bonded to each other via the active metal brazing material, an interface reaction layer is formed between the active metal brazing material and the ceramic member, and the closest same species atomic distance of crystal planes in a bonding interface of the interface reaction layer and the ceramic member is 30% or under based on the closest same species atomic distance of crystal planes of the ceramic member.SELECTED DRAWING: Figure 4
【課題】セラミックスとセラミックス表面に形成する界面反応層のひずみが低減される構造を提供する。【解決手段】セラミックス部材と、金属部材と、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｍｇ、Ｃａ、Ｙ、Ｃｅ、Ｌa、Ｓｍ、Ｙｂ、Ｎｄ、Ｇｄ、Ｅｒのいずれか１種以上を活性金属種として含む活性金属ろう材と、を有し、前記セラミックス部材と前記金属部材とが、前記活性金属ろう材を介して接合されており、前記活性金属ろう材と前記セラミックス部材との間に界面反応層が形成されており、前記界面反応層と前記セラミックス部材との接合界面の結晶面の最近接同種原子間距離が、前記セラミックス部材の結晶面の最近接同種原子間距離を基準として３０％以内である。【選択図】図４
CERAMIC-METAL CONJUGATE AND MANUFACTURING METHOD THEREOF, DIELECTRIC CIRCUIT BOARD, AND POWER MODULE
セラミックス－金属接合体及びその製造方法、絶縁回路基板、パワーモジュール
NOKAWA GENYA (author) / TAKANO TAKASHI (author) / OKISHIRO KENJI (author) / TOBE HIKARI (author) / IWASAKI TOMIO (author)
2022-03-31
Patent
Electronic Resource
Japanese